NTB75N03-06 ONSEMI [ON Semiconductor], NTB75N03-06 Datasheet

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NTB75N03-06

Manufacturer Part Number
NTB75N03-06
Description
Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
NTP75N03−06,
NTB75N03−06
Power MOSFET
75 Amps, 30 Volts
N−Channel TO−220 and D
purpose part that provides the “best of design” available today in a low
cost power package. This power MOSFET is designed to withstand
high energy in the avalanche and commutation modes. The
Drain−to−Source Diode has a fast response with soft recovery.
Features
Typical Applications
G
December, 2003 − Rev. 4
This 20 V
Ultra−Low R
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
I
High Avalanche Energy Capability
ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTP1306 and MTB1306
Semiconductor Components Industries, LLC, 2003
DSS
N−Channel
and V
D
GS
DS(on)
S
DS(on)
gate drive vertical Power MOSFET is a general
Specified at Elevated Temperatures
, Single Base, Advanced Technology
2
PAK
1
†For information on tape and reel specifications,
NTP75N03−06
NTB75N03−06
NTB75N03−06T4
Gate
1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
2
(BR)DSS
1
3
30 A
75
N03−06
YWW
Device
Drain
Drain
4
ORDERING INFORMATION
2
4
CASE 221A
MARKING DIAGRAMS
& PIN ASSIGNMENTS
TO−220AB
http://onsemi.com
Style 5
3
Source
5.3 mW @ 10 V
R
75N03−06
Y
WW
Package
DS(on)
TO−220
D
D
2
2
PAK
PAK
Publication Order Number:
Gate
TYP
1
1
CASE 418AA
75
N03−06
YWW
= Device Code
= Year
= Work Week
800/Tape & Reel
NTP75N03−06/D
3
2
D
Drain
Style 2
Drain
50 Units/Rail
50 Units/Rail
2
4
Shipping
2
PAK
I
D
75 A
MAX
3
Source
4

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NTB75N03-06 Summary of contents

Page 1

... Semiconductor Components Industries, LLC, 2003 December, 2003 − Rev PAK Gate NTP75N03−06 NTB75N03−06 NTB75N03−06T4 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I ...

Page 2

... Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds 1. When surface mounted to an FR4 board using the minimum recommended pad size. NTP75N03−06, NTB75N03−06 Rating = (pk ...

Page 3

... Reverse Recovery Time (Note 4) (Note 4) Reverse Recovery Stored Charge (Note 4) Charge (Note 4) 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. 4. From characterization test data. NTP75N03−06, NTB75N03− unless otherwise noted) A Symbol V (BR)DSS I DSS ...

Page 4

... DRAIN CURRENT (AMPS) D Figure 3. On−Resistance vs. Drain Current and Temperature 1 37 1.4 1.2 1 0.8 0.6 −50 − JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation Temperature NTP75N03−06, NTB75N03−06 150 135 120 105 2 2.6 0.5 ...

Page 5

... R , GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1600 1400 1200 1000 800 600 400 200 Figure 11. Maximum Avalanche Energy vs. NTP75N03−06, NTB75N03− Figure 8. Gate−to−Source and Drain− ...

Page 6

... NTP75N03−06, NTB75N03−06 PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA NOTES: SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI −T− PLANE Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH DIMENSION Z DEFINES A ZONE WHERE ALL ...

Page 7

... NTP75N03−06, NTB75N03−06 PACKAGE DIMENSIONS −B− −T− SEATING PLANE 0.13 (0.005 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0. PAK CASE 418AA−01 ISSUE O C NOTES 1.016 6.096 0.04 0.24 3.05 0.12 17.02 0.67 mm SCALE 3:1 inches 2 Figure 12. D PAK http://onsemi.com 7 1 ...

Page 8

... Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTP75N03−06, NTB75N03−06 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2− ...

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