RT1P432M ISAHAYA [Isahaya Electronics Corporation], RT1P432M Datasheet - Page 2

• Manufacturer Part Number: RT1P432M
• Description: Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type
• Manufacturer: ISAHAYA [Isahaya Electronics Corporation]

MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS
SYMBOL
Ｖ
SYMBOL
Ｒ
Ｖ
Ｖ
Ｖ
Ｔ ｓ ｔ ｇ
（ Ｂ Ｒ ） Ｃ Ｅ Ｏ
Ｉ
Ｖ
Ｖ
Ｖ
２
Ｃ Ｅ （ ｓ ａ ｔ ）
Ｉ
ｈ
Ｉ （ Ｏ Ｆ Ｆ ）
Ｉ （ Ｏ Ｎ ）
Ｒ
Ｉ
Ｔ ｊ
Ｐ
Ｃ Ｂ Ｏ
ｆ
／Ｒ
Ｃ Ｍ
Ｃ Ｂ Ｏ
Ｅ Ｂ Ｏ
Ｃ Ｅ Ｏ
Ｃ
Ｆ Ｅ
Ｔ
１
Ｃ
１
-1000
-100
-10
-0.1
-10
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
-1
0
-1
V
CE
V
INPUT OFF VOLTAGE Ｖ
CE
=-5V
COLLECTOR CURRENT Ｉ
-0.4
PARAMETER
PARAMETER
=-0.2V
V S . C O L L E C T O R C U R R E N T
V S . I N P U T O F F V O L T A G E
C O L L E C T O R C U R R E N T
I N P U T O N V O L T A G E
-0.8
ISAHAYA ELECTRONICS CORPORATION
-10
-1.2
Ｒ Ｔ １ Ｐ ４ ３ ２ Ｘ SERIES
Ｉ （ ＯＦ Ｆ ）
Ｃ
-1.6
I
V
V
I
V
V
V
（ ｍＡ ）
C
C
-55∼+150
RT1P432U
（ Ｖ ）
CB
CE
CE
CE
CE
=-100μA，R
=-5V，I
=-10mA，I
=-0.2V，I
=-5V，I
=-6V，I
=-50V，I
+150
150
-100
-2
C
C
E
E
C
=10mA
=-10mA
B
=-100μA
=0
TEST CONDITION
=-5mA
BE
RT1P432M
=-0.5mA
=∞
1000
100
10
-1
RATING
-100
-200
V
-50
-50
200
-7
CE
=-5V
RT1P432C
COLLECTOR CURRENT Ｉ
-55∼+150
D C F O R W A R D C U R R E N T G A IN
+150
V S . C O L L E C T O R C U R R E N T
-10
RT1P432S
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
450
-0.5
MIN
-50
3.3
1.7
30
Ｃ
（ ｍＡ ）
LIMIT
UNIT
TYP
-0.1
-1.0
-0.8
150
mA
mA
4.7
2.1
℃
℃
V
V
V
mW
-100
〈 Transistor 〉
MAX
-0.1
-0.3
-1.8
6.1
2.6
UNIT
MHz
μA
kΩ
−
V
V
V
V