RT1A3906-T122 ISAHAYA [Isahaya Electronics Corporation], RT1A3906-T122 Datasheet
RT1A3906-T122
Manufacturer Part Number
RT1A3906-T122
Description
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
Manufacturer
ISAHAYA [Isahaya Electronics Corporation]
Datasheet
1.RT1A3906-T122.pdf
(3 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RT1A3906-T122-1
Manufacturer:
ON
Quantity:
134
ELECTRICAL CHARACTERISTICS
V
V
V
V
V
Symbol
(BR)CEO
(BR)CBO
(BR)EBO
CE (sat)
BE (sat)
I
ｈ
MAXIMUM RATINGS
I
ｆ
C
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
FEATURE
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
● Small collector to emitter saturation voltage.
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
CEX
BL
ob
DESCRIPTION
FE
T
RT1A3906 is a super mini package resin sealed
VCE(sat)=-0.4Vmax（@I
Symbol
V
V
V
T
I
P
T
CBO
CEO
EBO
stg
C
c
j
C
C
E
B a s e
C o l l e c t o r
D C
C
B
G a i n
C o l l e c t o r
t o
t o
t o
t o
t o
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
f o r w a r d
B
B
E
E
E
b a n d w i d t h
c u t
b r e a k
b r e a k
b r e a k
S a t u r a t i o n
S a t u r a t i o n
Parameter
（Ta=25℃）
o u t p u t
Parameter
C
c u t
=-50mA、I
o f f
c u r r e n t
d o w n
d o w n
d o w n
o f f
c a p a c i t a n c e
（Ta=25℃）
B
c u r r e n t
=-5mA）
p r o d u c t
ISAHAYA ELECTRONICS CORPORATION
c u r r e n t
V o l t a g e
V o l t a g e
v o l t a g e
v o l t a g e
v o l t a g e
-55∼＋150
g a i n
Ratings
＋150
-60
-40
200
150
-6
Ic=-1mA,R
Ic=-10μA,I
I
V
V
V
Ic=-50mA,I
Ic=-50mA,I
V
V
E
CE
CE
CE
CE
CB
=-30V,V
=-30V,V
=-1V,I
=-20V, I
=-5V,I
=-10μA,I
Unit
mW
mA
℃
℃
V
V
V
C
E
BE
=-10mA
EB
EB
=0,f=1MHz
=∞
B
B
E
=-3V
=-3V
=-5mA
=-5mA
C
=0
C
=-10mA ,f=100MHz
=0
Test conditions
OUTLINEDRAWING
unit：ｍｍ
FOR LOW FREQUENCY AMPLIFY APPLICATION
Terminal connection
①：Base
②：Emitter
③：Collector
SILICON PNP EPITAXIAL TYPE(mini type)
Marking Figure
Abbreviation
for Kind
〈SMALL-SIGNAL TRANSISTOR〉
２ Ｗ
0.5
1
2
Min
-40
-60
100
250
-6
−
−
−
RT1A3906-T122
2.5
1.5
Limits
Min
JEITA：SC-59
JEDEC ： TO-236resemble
hFE Item
0.5
-400
-950
3
Min
-50
-50
300
5.0
−
Unit
MHz
nA
nA
mV
mV
pF
V
V
V
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RT1A3906-T122 Summary of contents
Page 1
... B V =-20V, I =-10mA ,f=100MHz =-5V,I =0,f=1MHz CB E ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 RT1A3906-T122 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type) 2.5 0.5 0.5 1 Terminal connection ①：Base JEITA：SC-59 ②：Emitter JEDEC ： TO-236resemble ③：Collector Marking Figure ２ ...
Page 2
... VS.COLLECTOR CURRENT 1000 Ta=25℃ VCE=-1V 100 10 -0.1 -1 -10 COLLECTOR CURRENT IC(mA) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 1000 Ta=25℃ VCE=-20V 100 EMITTER CURRENT IE(mA) RT1A3906-T122 COMMON EMITTER TRANSFER -50 Ta=25℃ VCE=-1V -40 -250μA -30 -200μA -20 -150μA -100μA -10 IB=-50μ -0.0 -0 -10 ...
Page 3
Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...