RT1P430C ISAHAYA [Isahaya Electronics Corporation], RT1P430C Datasheet - Page 2

• Manufacturer Part Number: RT1P430C
• Description: Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type
• Manufacturer: ISAHAYA [Isahaya Electronics Corporation]

MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
SYMBOL
Ｖ
Ｔ ｓ ｔ ｇ
（ Ｂ Ｒ ） Ｃ Ｅ Ｏ
Ｉ
Ｖ
Ｖ
Ｖ
Ｃ Ｅ （ ｓ ａ ｔ ）
Ｉ
ｈ
Ｒ
Ｉ
Ｔ ｊ
Ｐ
Ｃ Ｂ Ｏ
ｆ
-0.1
-1000
-10
Ｃ Ｍ
Ｃ Ｂ Ｏ
Ｅ Ｂ Ｏ
Ｃ Ｅ Ｏ
-100
Ｃ
Ｆ Ｅ
Ｔ
-1
１
Ｃ
-10
-0.1
-0
V
V
CE
CE
-0.2 -0.4 -0.6 -0.8
=-0.2V
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
=-5V
Input on voltage-Collector CUrrent
Collector Current-Input off voltage
PARAMETER
PARAMETER
Collector CUrrent Ic (mA)
Input off voltage VI(OFF) (V)
-1
-1
ISAHAYA ELECTRONICS CORPORATION
-1.2 -1.4 -1.6 -1.8
-10
Ｒ Ｔ １ P４ ３ ０ Ｘ SERIES
I
V
V
I
V
C
C
-55∼+150
RT1P430U
CB
CE
CE
=-100μA，R
=-5V，I
=-10mA，I
=-6V，I
=-50V，I
+150
150
-100
-2
C
E
E
=10mA
=-1mA
B
=0
TEST CONDITION
BE
RT1P430M
=-0.5mA
=∞
1000
100
10
-0.1
RATING
V
-100
-200
200
CE
-50
-50
-6
=-5V
DC forward current gain -Collector CUrrent
RT1P430C
-55∼+150
+150
Collector CUrrent Ic(mA)
-1
RT1P430S
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
450
MIN
-50
100
3.3
-10
LIMIT
UNIT
TYP
150
mA
mA
4.7
℃
℃
V
V
V
mW
-100
MAX
-0.1
-0.3
6.1
UNIT
MHz
μA
kΩ
−
V
V