RT1P141C ISAHAYA [Isahaya Electronics Corporation], RT1P141C Datasheet - Page 2

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RT1P141C

Manufacturer Part Number
RT1P141C
Description
TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE
Manufacturer
ISAHAYA [Isahaya Electronics Corporation]
Datasheet

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MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS
SYMBOL
SYMBOL
(BR)CEO
Tstg
CE(sat)
I(OFF)
I(ON)
/R
CBO
Tj
CBO
EBO
CEO
FE
CM
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector
dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
-1000
-0.1
-10
-100
-1
-10
-1
Input On Voltage - Collector Current
Collector Current - Input Off Voltage
-0
PARAMETER
PARAMETER
Input Off Voltage  V I ( O F F ) ( V )
Collector Current  I C ( mA )
-0.4
ISAHAYA ELECTRONICS CORPORATION
-0.8
-10
RT1P141X SERIES
-1.2
RT1P141T
I
V
V
I
V
V
V
125(※)
C
CB
CE
C
CE
CE
CE
=-100μA,R
=-5V,I
=-10mA,I
=-0.2V,I
=-5V,I
=-6V,I
=-50V,I
-1.6
-55~+125
+125
-100
C
C
E
E
(※ ) package mounted on 9mm×19mm×1mm glass-epoxy substrate.
C
=10mA
=-10mA
=-100μA
-2
RT1P141U
=0
B
TEST CONDITION
=-5mA
BE
=-0.5mA
=∞
125
1000
100
10
1
-1
RT1P141M
DC Forward Gain - Collector Current
RATING
-100
-200
-50
-10
-50
Collector Current  I C ( mA )
150
RT1P141C
-55~+150
+150
-10
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
-0.8
MIN
-50
7.0
0.9
50
RT1P141S
LIMIT
TYP
-0.1
-1.5
-1.1
150
1.0
10
450
〈Transistor〉
MAX
-100
-0.1
-0.3
-3.0
1.1
13
UNIT
mW
mA
mA
V
V
V
UNIT
MHz
μA
V
V
V
V

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