RT1N432C ISAHAYA [Isahaya Electronics Corporation], RT1N432C Datasheet - Page 2

• Manufacturer Part Number: RT1N432C
• Description: Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
• Manufacturer: ISAHAYA [Isahaya Electronics Corporation]

MAXIMUM RATING (Ta=25 ℃)
ELECTRICAL CHARACTERISTICS (Ta=25 ℃)
TYPICAL CHARACTERISTICS
SYMBOL
Ｖ
SYMBOL
Ｖ
Ｒ
Ｖ
Ｖ
Ｔ ｓ ｔ ｇ
（ Ｂ Ｒ ） Ｃ Ｅ Ｏ
Ｉ
Ｖ
Ｖ
Ｖ
２
Ｃ Ｅ （ ｓ ａ ｔ ）
Ｉ
ｈ
Ｉ （ Ｏ Ｆ Ｆ ）
Ｉ （ Ｏ Ｎ ）
Ｒ
Ｉ
Ｔ ｊ
Ｐ
Ｃ Ｂ Ｏ
ｆ
／Ｒ
Ｃ Ｍ
Ｃ Ｂ Ｏ
Ｅ Ｂ Ｏ
Ｃ Ｅ Ｏ
Ｆ Ｅ
Ｃ
Ｔ
１
Ｃ
１
1000
100
10
0.1
10
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistance
Resistance ratio
Gain band width product
1
0
1
V
V
CE
INPUT OFF VOLTAGE Ｖ
CE
=5V
COLLECTOR CURRENT Ｉ
0.4
=0.2V
PARAMETER
PARAMETER
V S . C O L L E C T O R C U R R E N T
V S . I N P U T O F F V O L T A G E
C O L L E C T O R C U R R E N T
I N P U T O N V O L T A G E
0.8
ISAHAYA ELECTRONICS CORPORATION
10
1.2
Ｒ Ｔ １ Ｎ ４ ３ ２ Ｘ SERIES
Ｉ （ Ｏ Ｆ Ｆ ）
Ｃ
（ ｍＡ）
I
V
V
I
V
V
V
1.6
C
C
（ Ｖ ）
RT1N432U
-55∼+150
CB
CE
CE
CE
CE
=100μA，R
=5V，I
=0.2V，I
=5V，I
=6V，I
=50V，I
=10mA，I
+150
150
100
C
C
E
2
E
C
=-10mA
=10mA
B
=100μA
=0
=5mA
BE
TEST CONDITION
=0.5mA
RT1N432M
=∞
1000
100
10
1
RATING
100
200
200
V
50
50
7
CE
=5V
RT1N432C
-55∼+150
COLLECTOR CURRENT Ｉ
D C F O R W A R D C U R R E N T G A I N
V S . C O L L E C T O R C U R R E N T
+150
10
RT1N432S
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
450
MIN
0.5
3.3
1.7
50
30
Ｃ
（ ｍＡ）
LIMIT
UNIT
TYP
200
mA
mA
0.1
1.0
0.8
4.7
2.1
℃
℃
V
V
V
mW
100
〈 Transistor 〉
MAX
0.1
0.3
1.8
6.1
2.6
UNIT
MHz
μA
kΩ
−
V
V
V
V