RT1N230C ISAHAYA [Isahaya Electronics Corporation], RT1N230C Datasheet - Page 2

• Manufacturer Part Number: RT1N230C
• Description: Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
• Manufacturer: ISAHAYA [Isahaya Electronics Corporation]

MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS
SYMBOL
SYMBOL
Ｖ
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
Ｖ
Ｖ
Ｔｓｔｇ
Ｖ
ＣＥ（ｓａｔ）
Ｉ
ｈ
Ｒ
Ｉ
Ｐ
ＣＢＯ
Ｔｊ
ｆ
ＣＢＯ
ＥＢＯ
ＣＥＯ
ＦＥ
ＣＭ
Ｔ
１
Ｃ
Ｃ
1000
100
0.1
10
10
1
0.1
0
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
V
V
CE
CE
INPUT OFF VOLTAGE Ｖ
=0.2V
=5V
COLLECTOR CURRENT Ｉ
0.4
VS .CO LLECTO R CUR R ENT
VS .I NP UT O FF VO LTA GE
CO L LECTO R CUR R ENT
I NP UT O N VO LTAGE
PARAMETER
PARAMETER
1
0.8
1.2
ISAHAYA ELECTRONICS CORPORATION
10
Ｉ（ＯＦＦ）
Ｃ
（ｍＡ）
1.6
（Ｖ）
ＲＴ１Ｎ２３０Ｘ SERIES
I
V
V
I
V
-55～+125
100
2
125
C
CB
CE
C
CE
RT1N230T
（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.
=100μA，R
=5V，I
=10mA，I
=6V，I
=50V，I
+125
（※ ）
1000
100
C
E
10
E
=-10mA
=1mA
0.1
=0
B
BE
TEST CONDITION
=0.5mA
RT1N230U
=∞
V
CE
150
=5V
DC FO RWAR D CURRENT GAI N
COLLECTOR CURRENT Ｉ
V S .CO LL ECTO R CURRENT
1
RT1N230M
RATING
100
200
50
50
6
-55～+150
10
+150
200
Ｃ
（ｍＡ）
RT1N230C
100
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
MIN
100
1.5
50
RT1N230S
LIMIT
450
TYP
200
2.2
〈Transistor〉
MAX
UNIT
0.1
0.3
2.8
mW
mA
mA
℃
℃
V
V
V
UNIT
MHz
μA
kΩ
－
V
V