RT1C3904-T12 ISAHAYA [Isahaya Electronics Corporation], RT1C3904-T12 Datasheet - Page 2

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RT1C3904-T12

Manufacturer Part Number
RT1C3904-T12
Description
Transistor
Manufacturer
ISAHAYA [Isahaya Electronics Corporation]
Datasheet
SYMBOL
V
V
h
fT
Cobo
FE
CE(sat)
BE(sat)
Current Gain Bandwidth product 
Collector-Emitter saturation
Voltage
Base-Emitter saturation
Voltage
DC current gain
Output Capacitance
PARAMETER
ISAHAYA ELECTRONICS CORPORATION
V
I
I
I
I
I
I
I
I
I
I
C
C
C
C
C
CB
C
C
C
C
C
=10mA, V
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=0.1mA, V
=1.0mA, V
=10mA, V
=50mA, V
=100mA, V
=5V, I
TESTCONDITIONS
E
=0,fT=1.0MHz
B
B
B
B
CE
=1.0mA
=5.0mA
=1.0mA
=5.0mA
CE
CE
CE
CE
CE
=20V,f=100MHz
=1.0V
=1.0V
=1.0V
=1.0V
=1.0V
RT1C3904-T12
Silicon NPN Epitaxial Type
For
MIN
0.65
300
40
70
100
60
30
General purpose
LIMITS
TYP
Transistor
Application
MAX
0.85
0.95
300
0.2
0.3
4.0
UNIT
MHz
pF
V
V
V
V

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