RT1C3904-T12 ISAHAYA [Isahaya Electronics Corporation], RT1C3904-T12 Datasheet - Page 2
RT1C3904-T12
Manufacturer Part Number
RT1C3904-T12
Description
Transistor
Manufacturer
ISAHAYA [Isahaya Electronics Corporation]
Datasheet
1.RT1C3904-T12.pdf
(3 pages)
SYMBOL
V
V
h
fT
Cobo
FE
CE(sat)
BE(sat)
Current Gain Bandwidth product
Collector-Emitter saturation
Voltage
Base-Emitter saturation
Voltage
DC current gain
Output Capacitance
PARAMETER
ISAHAYA ELECTRONICS CORPORATION
V
I
I
I
I
I
I
I
I
I
I
C
C
C
C
C
CB
C
C
C
C
C
=10mA, V
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=0.1mA, V
=1.0mA, V
=10mA, V
=50mA, V
=100mA, V
=5V, I
TESTCONDITIONS
E
=0,fT=1.0MHz
B
B
B
B
CE
=1.0mA
=5.0mA
=1.0mA
=5.0mA
CE
CE
CE
CE
CE
=20V,f=100MHz
=1.0V
=1.0V
=1.0V
=1.0V
=1.0V
RT1C3904-T12
Silicon NPN Epitaxial Type
For
MIN
0.65
−
300
−
40
70
100
60
30
−
−
General purpose
LIMITS
TYP
Transistor
Application
MAX
0.85
0.95
−
−
300
−
−
0.2
0.3
4.0
−
UNIT
MHz
pF
V
V
V
V