bgu7003 NXP Semiconductors, bgu7003 Datasheet

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bgu7003

Manufacturer Part Number
bgu7003
Description
Wideband Silicon Germanium Low-noise Ampli?er Mmic
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed,
low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
package.
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BGU7003
Wideband silicon germanium low-noise amplifier MMIC
Rev. 01 — 2 March 2009
Low noise high gain microwave MMIC
Applicable between 40 MHz and 6 GHz
Integrated temperature stabilized bias for easy design
Bias current configurable with external resistor
Noise figure NF = 0.80 dB at 1.575 GHz
Insertion power gain = 18.3 dB at 1.575 GHz
110 GHz transit frequency - SiGe:C technology
Power-down mode current consumption < 1 A
Optimized performance at low 5 mA supply current
ESD protection > 1 kV Human Body Model (HBM) on all pins
GPS
Satellite radio
Low-noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog / digital cordless applications
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Product data sheet

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bgu7003 Summary of contents

Page 1

... Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...

Page 2

... Rev. 01 — 2 March 2009 = (input and output matched Min Typ 2.2 [ +25 [ 138 MHz and - 1 Simplified outline bottom view 1 0.5 mm Marking code B3 BGU7003 Max Unit - 20.1 - dBm 0.2 - dBm Graphic symbol ...

Page 3

... R_BIAS Rev. 01 — 2 March 2009 103 C Conditions 0.7 V unless otherwise specified. All ENABLE Min Typ Max 2.2 [1] 3 [1] 0 +25 +85 16.0 17.5 - [2] 14.0 15.2 - [2] 10.0 11 amb [2] 15.0 17.5 - [2] 13.0 15.2 - [2] 9 BGU7003 Min Max Unit - 3 [ +150 C - 150 C Typ Unit 235 K/W Unit - 2. 0.001 ...

Page 4

... amb = Total supply current as a function of bias resistor; typical values Rev. 01 — 2 March 2009 BGU7003 State OFF ON 001aaj652 3000 4000 5000 6000 7000 bias © NXP B.V. 2009. All rights reserved ...

Page 5

... Input reflection coefficient (S ); typical values 11 135 0.5 0.2 0 0.2 0.5 180 6 GHz 0.2 0.5 135 5 amb CC(tot) CC Output reflection coefficient (S 22 Rev. 01 — 2 March 2009 BGU7003 100 MHz 001aaj653 = 30 dBm drive ...

Page 6

... function of Fig 5. 21 001aaj659 NF min (dB) 4000 6000 f (MHz Fig 7. Rev. 01 — 2 March 2009 BGU7003 2000 4000 5.0 mA; V amb CC(tot dBm drive 0 2 Isolation ( function of frequency; ...

Page 7

... Optimum source reflection coefficient for minimum noise figure; typical values 0.3 r n(eq) 0.2 0 2000 5.0 mA 2.5 V. amb CC(tot) CC Normalized Equivalent noise resistance as a function of frequency; typical values Rev. 01 — 2 March 2009 BGU7003 100 MHz 001aaj661 001aaj662 ...

Page 8

... SMA RF connector - DC header - Rev. 01 — 2 March 2009 BGU7003 GND out 001aaj663 Supplier name/type Remarks MurataGRM1555 DC blocking MurataGRM1555 decoupling Murata/LQW15A high quality ...

Page 9

... NXP Semiconductors 8.2 Application board layout Figure 11 Fig 11. Printed-Circuit Board (PCB) of the BGU7003 evaluation board 8.3 Printed-Circuit Board The material that has been used for the evaluation board is FR4 using the stack shown in Figure 12. Fig 12. Stack of the PCB material BGU7003_1 Product data sheet Wideband silicon germanium low-noise amplifi ...

Page 10

... MHz MHz 135 0.5 0.2 0 0.2 0.5 180 0.2 0.5 135 2 5.0 mA; V amb CC CC(tot) matched Rev. 01 — 2 March 2009 BGU7003 0 (input and output matched Min Typ - 18 0. 138 MHz and - MHz - ...

Page 11

... 2 5.0 mA; V amb CC CC(tot) matched 001aaj667 |s (dB) 2500 3000 3500 f (MHz) = 5.0 mA; CC(tot) (input and output function of Fig 16. Output return loss ( s Rev. 01 — 2 March 2009 BGU7003 500 MHz GHz 001aaj666 0 ...

Page 12

... Fig 18. Reverse Isolation ( s 21 001aaj671 (dB (dBm) drive = 5.0 mA; CC(tot 276 MHz; 2 (input and output Fig 20. Load power and third order intermodulation Rev. 01 — 2 March 2009 BGU7003 500 1000 1500 2000 2500 2 amb ...

Page 13

... Wideband silicon germanium low-noise amplifier MMIC 001aaj673 G (dB (dBm) drive = 5.0 mA; CC(tot (input S L Fig 22. Power gain and noise figure as function of Rev. 01 — 2 March 2009 BGU7003 1475 1525 1575 1625 2 5.0 mA; amb ...

Page 14

... Wideband silicon germanium low-noise amplifier MMIC scale 1.05 0.35 0.40 0.55 0.35 0.95 0.27 0.32 REFERENCES JEDEC JEITA Rev. 01 — 2 March 2009 BGU7003 SOT891 4 ( EUROPEAN ISSUE DATE PROJECTION 05-04-06 07-05-15 © NXP B.V. 2009. All rights reserved ...

Page 15

... Low-Noise Amplifier Monolithic Microwave Integrated Circuit Radio Frequency Silicon Germanium Carbon SubMiniature version A Wireless Local Area Network Data sheet status Product data sheet Rev. 01 — 2 March 2009 BGU7003 0.5 0 solder resist solder land plus solder paste occupied area Dimensions in mm ...

Page 16

... Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 2 March 2009 BGU7003 © NXP B.V. 2009. All rights reserved ...

Page 17

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BGU7003 All rights reserved. Date of release: 2 March 2009 Document identifier: BGU7003_1 ...

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