bfg25aw-x NXP Semiconductors, bfg25aw-x Datasheet - Page 3

• Manufacturer Part Number: bfg25aw-x
• Description: Npn 5 Ghz Wideband Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Note
1. G
1998 Sep 23
R
V
V
V
I
h
C
f
G
F
SYMBOL
SYMBOL
j
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
th j-s
= 25 C unless otherwise specified.
re
NPN 5 GHz wideband transistors
UM
s
UM
is the temperature at the soldering point of the collector pin.
is the maximum unilateral power gain, assuming S
thermal resistance from junction to soldering point T
collector-base breakdown voltage
collector-emitter breakdown voltage I
emitter-base breakdown voltage
collector leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
noise figure
PARAMETER
PARAMETER
I
I
open emitter; V
I
I
I
T
I
f = 1 GHz; T
I
f = 2 GHz; T
f = 1 GHz
f = 1 GHz
C
C
E
C
C
C
C
C
s
s
amb
= 100 A; I
= 100 A; I
= 1 mA; I
= 0.5 mA; V
= 0; V
= 1 mA; V
= 0.5 mA; V
= 0.5 mA; V
= 25 C
opt
opt
; I
; I
CE
3
12
CONDITIONS
C
C
= 1 V; f = 1 MHz
B
is zero.
= 0.5 mA; V
= 1 mA; V
amb
amb
CE
= 0
C
E
CE
CE
CE
= 0
= 0
CB
s
= 1 V; f = 1 GHz;
= 25 C
= 25 C
= 1 V
= 1 V;
= 1 V;
= 5 V; I
85 C; note 1
G
CONDITIONS
UM
CE
CE
= 1 V;
E
=
= 1 V;
= 0
10
BFG25AW; BFG25AW/X
log
-------------------------------------------------------------- dB.
50
3.5
1
MIN.
–
S
11
80
0.2
5
16
8
1.9
2
S
2
TYP.
21
VALUE
Product specification
180
1
2
–
S
8
5
2
50
200
0.3
MAX.
22
2
UNIT
K/W
V
V
V
nA
pF
GHz
dB
dB
dB
dB
UNIT