IPB70P04P4-09 INFINEON [Infineon Technologies AG], IPB70P04P4-09 Datasheet

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IPB70P04P4-09

Manufacturer Part Number
IPB70P04P4-09
Description
OptiMOS-P2 Power-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPB70P04P4-09
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPB70P04P4-09
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.3
OptiMOS
Features
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB70P04P4-09
IPI70P04P4-09
IPP70P04P4-09
®
-P2 Power-Transistor
2)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
I
V
P
T
-
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
4P0409
4P0409
4P0409
stg
T
V
T
V
T
I
-
-
T
-
-
D
C
C
C
C
GS
GS
=-36A
page 1
=25°C,
=100°C,
=25°C
=25 °C
=-10V
=-10V
Conditions
PG-TO263-3-2
Product Summary
V
R
I
D
DS
DS(on)
(SMD Version)
IPI70P04P4-09, IPP70P04P4-09
PG-TO262-3-1
-55 ... +175
55/175/56
Value
-288
±20
-72
-50
-72
24
75
IPB70P04P4-09
PG-TO220-3-1
-40
-70
9.1
2011-02-14
Unit
A
mJ
A
V
W
°C
V
mW
A

Related parts for IPB70P04P4-09

IPB70P04P4-09 Summary of contents

Page 1

... GS T =100° =-10V =25°C D,pulse =-36A =25 °C tot stg - - page 1 IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 -40 9.1 -70 PG-TO262-3-1 PG-TO220-3-1 Value Unit -72 A -50 -288 24 mJ -72 A ± -55 ... +175 °C 55/175/56 2011-02- ...

Page 2

... =-32V DSS T =25° =-32V =125° =-20V, V GSS =-10V, I =-70A DS(on =-10V, I =-70A SMD version page 2 IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 Values min. typ. max -40 - -2.0 -3.0 -4.0 =0V, - -0.05 -1 =0V, - -20 -200 = -100 - 6.9 9.4 - 6.6 9 ...

Page 3

... C I S,pulse V =0V, I =-70A =25° =-20V, I =-50A /dt =-100A/µ (one layer, 70 µm thick) copper area for drain page 3 IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 Values Unit min. typ. max. - 3700 4810 pF - 1400 1820 - ...

Page 4

... Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 10 [V] page 4 IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 ≤ -6V; SMD ); 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - ...

Page 5

... Typ. drain-source on-state resistance R = f(T DS(on -55 ° [V] page 5 IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4- °C; SMD -5V - -10 V; SMD -60 - 100 T [°C] j -6V -6.5V -7V -10V 72 140 ...

Page 6

... Drain-source breakdown voltage V BR(DSS 1.2 1.4 1.6 1.8 2 -60 [V] page 6 IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4- MHz [ f - 100 T [°C] j Ciss Coss Crss 25 30 140 ...

Page 7

... Typ. gate charge -70 A pulsed GS gate D parameter gate Rev. 1.3 14 Gate charge waveforms - -32V 40 60 [nC] page 7 IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4- gate gate 2011-02-14 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 IPI70P04P4-09, IPP70P04P4-09 page 8 IPB70P04P4-09 2011-02-14 ...

Page 9

... Revision History Version Rev. 1.3 Date 1.1 02.09.2009 1.2 07.10.2009 1.2 07.10.2009 1.2 07.10.2009 1.2 07.10.2009 I 1.3 04.02.2011 Final Data Sheet page 9 IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 Changes changed to 116uA GS(th changed to 120uA GS(th changed to 70A DS(on changed to 70A changed to 20V GSS GS 2011-02-14 ...

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