IPB70N04S4-06 INFINEON [Infineon Technologies AG], IPB70N04S4-06 Datasheet - Page 3

• Manufacturer Part Number: IPB70N04S4-06
• Description: OptiMOS-T2 Power-Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

Rev. 1.0
1)
2)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
1)
1)
1)
1)
1)
1)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1MHz
V
I
V
V
T
V
T
V
di
D
C
j
GS
DD
DD
GS
GS
R
=70A, R
=25°C
F
page 3
=25°C
=20V, I
/dt =100A/µs
=0V, V
=20V, V
=32V, I
=0 to 10V
=0V, I
Conditions
F
F
G
DS
=70A,
2
=50A,
D
=3.5
GS
=70A,
(one layer, 70 µm thick) copper area for drain
=25V,
=10V,
IPI70N04S4-06, IPP70N04S4-06
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1960
11.7
24.5
typ.
490
3.5
5.9
0.9
15
10
36
31
8
7
9
-
-
IPB70N04S4-06
max.
2550
15.2
32.0
640
280
8.1
1.3
35
70
-
-
-
-
-
-
-
2010-04-13
Unit
pF
ns
nC
V
A
V
ns
nC