NTD3055L170-1 ONSEMI [ON Semiconductor], NTD3055L170-1 Datasheet

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NTD3055L170-1

Manufacturer Part Number
NTD3055L170-1
Description
9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD3055L170-1G
Manufacturer:
ON
Quantity:
12 500
NTD3055L170
Power MOSFET
9.0 Amps, 60 Volts, Logic Level,
N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
MAXIMUM RATINGS
August, 2004 − Rev. 3
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Semiconductor Components Industries, LLC, 2004
pad size.
Derate above 25 C
Energy − Starting T
(V
L = 1.0 mH, I
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Purposes, 1/8 from case for 10 seconds
DD
− Continuous
− Non−repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 25 Vdc, V
L
(pk) = 7.75 A, V
Rating
GS
J
p
= 5.0 Vdc,
(T
= 25 C
v10 ms)
p
A
A
v10 ms)
J
GS
= 25 C
= 100 C
= 25 C unless otherwise noted)
A
A
A
= 10 MW)
= 25 C
= 25 C (Note 1)
= 25 C (Note 2)
DS
= 60 Vdc)
Symbol
T
V
V
R
R
R
J
V
V
E
I
P
DGR
, T
DSS
DM
T
I
I
qJC
qJA
qJA
GS
GS
AS
D
D
D
L
stg
−55 to
Value
"15
"20
28.5
0.19
71.4
175
100
260
9.0
3.0
2.1
1.5
5.2
60
60
27
30
1
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
W
W
W
C
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1 2
1
2
3
3
9.0 AMPERES, 60 VOLTS
3170L
A
Y
W
ORDERING INFORMATION
4
4
G
R
(Surface Mounted)
DS(on)
http://onsemi.com
(Straight Lead)
CASE 369AA
CASE 369D
STYLE 2
N−Channel
STYLE 2
= Device Code
= Assembly Location
= Year
= Work Week
DPAK−3
DPAK
D
= 170 mW
Publication Order Number:
S
Gate
Gate
NTD3055L170/D
DIAGRAMS
MARKING
1
1
Drain
Drain
Drain
Drain
4
2
4
2
3
Source
3
Source

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NTD3055L170-1 Summary of contents

Page 1

... MARKING DIAGRAMS 4 Drain 4 DPAK CASE 369AA (Surface Mounted) STYLE Drain Gate Source 4 Drain 4 DPAK−3 CASE 369D (Straight Lead) STYLE Gate Drain Source 3170L = Device Code A = Assembly Location Y = Year W = Work Week ORDERING INFORMATION Publication Order Number: NTD3055L170/D ...

Page 2

... Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD3055L170 NTD3055L170G NTD3055L170−1 NTD3055L170−1G NTD3055L170T4 NTD3055L170T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD3055L170 ( unless otherwise noted Vdc ...

Page 3

... Gate−to−Source Voltage 2 4 1.8 1.6 1.4 1.2 1 0.8 0.6 −50 − 100 T , JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature NTD3055L170 3 100 1 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2 ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) NTD3055L170 POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTD3055L170 1000 100 Figure 9 ...

Page 6

... DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 1 0.05 0.01 SINGLE PULSE 001 0.00001 0.0001 I Figure 14. Diode Reverse Recovery Waveform NTD3055L170 SAFE OPERATING AREA 100 STARTING JUNCTION TEMPERATURE ( C) J Figure 12. Maximum Avalanche Energy versus ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD3055L170 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 8

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD3055L170/D ...

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