NTD3055L104T4 ONSEMI [ON Semiconductor], NTD3055L104T4 Datasheet - Page 3

• Manufacturer Part Number: NTD3055L104T4
• Description: Power MOSFET
• Manufacturer: ONSEMI [ON Semiconductor]

0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
24
20
16
12
1.6
1.4
0.8
1.8
1.2
0.6
8
4
0
1
2
0
−50
0
0
8 V
6 V
V
V
−25
GS
V
I
V
D
1
DS
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
GS
= 6 A
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
= 5 V
= 5 V
Figure 3. On−Resistance versus
T
J
0
, JUNCTION TEMPERATURE ( C)
2
I
D
Gate−to−Source Voltage
, DRAIN CURRENT (AMPS)
25
8
3
Temperature
50
5 V
4
12
T
75
J
T
= 100 C
T
J
5
J
= −55 C
100
= 25 C
16
6
125
20
http://onsemi.com
7
150
NTD3055L104
4.5 V
3.5 V
3 V
4 V
24
175
8
3
10,000
1000
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
100
10
24
20
16
12
1
8
4
0
0
1
0
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
V
DS
1.5
V
V
V
GS
V
GS
DS
GS
T
10
Figure 2. Transfer Characteristics
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
= 0 V
10 V
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 100 C
2
I
T
D
J
, DRAIN CURRENT (AMPS)
2.5
= 25 C
20
and Gate Voltage
8
versus Voltage
T
T
J
J
3
= 100 C
= 150 C
T
J
30
3.5
12
= −55 C
T
T
4
T
J
J
J
= −55 C
= 100 C
= 25 C
16
40
4.5
5
20
50
5.5
24
60
6