NTD20N06L-1 ONSEMI [ON Semiconductor], NTD20N06L-1 Datasheet

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NTD20N06L-1

Manufacturer Part Number
NTD20N06L-1
Description
Power MOSFET 20 Amps, 60 Volts, Logic Level
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD20N06L-1G
Manufacturer:
ON
Quantity:
12 500
NTD20N06L
Power MOSFET
20 Amps, 60 Volts, Logic Level
N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
1. When surface mounted to an FR4 board using 1 pad size,
2. When surface mounted to an FR4 board using recommended pad size,
MAXIMUM RATINGS
August, 2003 − Rev. 1
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Designed for low voltage, high speed switching applications in
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Semiconductor Components Industries, LLC, 2003
(Cu Area 1.127 in
(Cu Area 0.412 in
Derate above 25 C
Energy − Starting T
(V
L = 1.0 mH, I
− Junction−to−Case
− Junction−to−Ambient (Note 1.)
− Junction−to−Ambient (Note 2.)
Purposes, 1/8 from case for 10 seconds
DD
− Continuous
− Non−repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 25 Vdc, V
L
(pk) = 16 A, V
2
2
Rating
GS
).
).
J
p
= 5.0 Vdc,
(T
= 25 C
v10 s)
p
A
A
v10 ms)
J
GS
= 25 C
= 100 C
= 25 C unless otherwise noted)
A
A
A
= 10 M )
= 25 C
= 25 C (Note 1.)
= 25 C (Note 2.)
DS
= 60 Vdc)
Symbol
T
V
V
R
R
R
J
V
V
E
I
P
DGR
, T
T
DSS
DM
I
I
GS
GS
D
D
AS
D
JC
JA
JA
L
stg
−55 to
Value
+175
"15
"20
0.40
1.88
1.36
128
260
110
2.5
60
60
20
10
60
60
80
1
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
W
W
W
C
C
20N06L
Y
WW
NTD20N06L
NTD20N06L−1
NTD20N06LT4
V
(BR)DSS
60 V
CASE 369D
Device
1 2
CASE 369C
1
Style 2
DPAK
2
Style 2
DPAK
ORDERING INFORMATION
3
Device Code
= Year
= Work Week
3
G
http://onsemi.com
4
4
Straight Lead
39 mW@5.0 V
R
Package
N−Channel
DS(on)
DPAK
DPAK
DPAK
D
MARKING DIAGRAMS
Publication Order Number:
TYP
S
Gate
Gate
1
1
2500 Tape & Reel
Drain
Drain
Drain
Drain
75 Units/Rail
75 Units/Rail
4
4
2
2
NTD20N06L/D
Shipping
(Note 1)
I
3
Source
3
Source
D
20 A
MAX

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NTD20N06L-1 Summary of contents

Page 1

... MARKING DIAGRAMS 4 4 Drain 3 DPAK 2 Style Drain Gate Source 4 4 Drain 2 3 DPAK Device Code Gate Drain Source = Year = Work Week ORDERING INFORMATION Package Shipping DPAK 75 Units/Rail DPAK 75 Units/Rail Straight Lead DPAK 2500 Tape & Reel Publication Order Number: NTD20N06L/D ...

Page 2

... SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage ( Adc Adc Reverse Recovery Time Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 s, Duty Cycle 4. Switching characteristics are independent of operating junction temperatures. NTD20N06L ( unless otherwise noted) J Symbol V (BR)DSS Vdc ...

Page 3

... Gate−to−Source Voltage 1.8 GS 1.6 1.4 1.2 1 0.8 0.6 −50 − JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature NTD20N06L 4 3 100 1 Figure 2. Transfer Characteristics 0.085 0.075 ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) NTD20N06L POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 5

... In addition the total r f power averaged over a complete switching cycle must not exceed (T − T )/(R ). J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTD20N06L 1000 100 ...

Page 6

... V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 I Figure 14. Diode Reverse Recovery Waveform NTD20N06L SAFE OPERATING AREA 140 120 10 s 100 100 STARTING JUNCTION TEMPERATURE ( C) J Figure 12. Maximum Avalanche Energy versus ...

Page 7

... Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection NTD20N06L interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process ...

Page 8

... C. The soldering temperature and time shall not exceed 260 C for more than 10 seconds. NTD20N06L SOLDER STENCIL GUIDELINES pattern of the opening in the stencil for the drain pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. Ç ...

Page 9

... C 150 C 100 TIME ( MINUTES TOTAL) NTD20N06L TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile ...

Page 10

... PL G 0.13 (0.005 −T− SEATING K PLANE 0.13 (0.005) M NTD20N06L PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE DPAK CASE 369D−01 ISSUE O C NOTES http://onsemi.com 10 INCHES ...

Page 11

... Notes NTD20N06L http://onsemi.com 11 ...

Page 12

... N. American Technical Support: 800−282−9855 Toll Free USA/Canada NTD20N06L JAPAN: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 NTD20N06L/D ...

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