NTR4101PT1 ONSEMI [ON Semiconductor], NTR4101PT1 Datasheet - Page 2

• Manufacturer Part Number: NTR4101PT1
• Description: Trench Power MOSFET -20 V, Single P-Channel, SOT-23
• Manufacturer: ONSEMI [ON Semiconductor]

4. Pulse Test: Pulse Width
5. Switching characteristics are independent of operating junction temperature.
OFF CHARACTERISTICS
ON CHARACTERISTICS
CHARGES, CAPACITANCES & GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 5)
DRAIN−SOURCE DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
Zero Gate Voltage Drain Current (Note 4)
Gate−to−Source Leakage Current
Gate Threshold Voltage (Note 4)
Drain−to−Source On−Resistance
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
(V
(V
(V
(V
(V
(V
(V
GS
GS
GS
GS
GS
GS
GS
= 0 V, I
= 0 V, V
= 8.0 V, V
= V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
DS
, I
D
DS
D
= −250 mA)
= −250 mA)
D
D
D
= −16 V)
DS
= −1.6 A)
= −1.3 A)
= −0.9 A)
= 0 V)
300 ms, Duty Cycle
DS
Characteristic
= −5.0 V, I
(V
(V
(
GS
(T
GS
GS
dI
dI
A
= −4.5 V, V
D
(V
(V
SD
SD
= 25 C unless otherwise noted)
(V
(V
= −2.3 A)
= 0 V, f = 1 MHz, V
I
(V
GS
GS
D
/dt = 100 A/ms, I
/dt = 100 A/ms, I
DS
DS
= −1.6 A, R
GS
2%.
= −4.5 V, V
= −10 V, I
= −10 V, I
,
= 0 V, I
(V
(V
4.5 V, V
DS
GS
http://onsemi.com
= −10 V, I
= 0 V,
S
G
D
D
0 V
NTR4101P
DS
DS
= −2.4 A)
,
= −1.6 A)
= −1.6 A)
= 6.0 W)
S
S
= −10 V,
DS
DS
= −1.6 A)
= −1.6 A)
2
D
10 V,
= −10 V)
= −1.6 A)
)
V
Symbol
R
V
Q
(BR)DSS
t
t
I
I
C
Q
Q
DS(on)
C
V
GS(th)
C
d(on)
d(off)
g
DSS
GSS
R
Q
G(tot)
t
t
t
FS
oss
GD
t
t
SD
iss
rss
GS
rr
a
b
r
G
f
rr
−0.40
Min
−20
−0.720
−0.82
1008
12.6
30.2
21.0
12.8
Typ
675
100
112
7.5
1.2
2.2
6.5
7.5
9.9
3.0
70
90
75
75
Max
−1.0
−1.5
−1.2
120
210
8.5
100
85
15
Unit
mW
mA
nA
pF
nC
nC
nC
nC
ns
ns
ns
ns
W
V
V
S
V