STN8205AAST8RG STANSON [Stanson Technology], STN8205AAST8RG Datasheet - Page 3

• Manufacturer Part Number: STN8205AAST8RG
• Description: Dual N Channel Enhancement Mode MOSFET
• Manufacturer: STANSON [Stanson Technology]

Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
Symbol
V
T
T
R
V
(BR)DSS
I
g
d(on)
d(off)
I
I
C
DS(on)
C
GS(th)
D(on)
V
Q
C
Q
t
t
Q
GSS
DSS
fs
r
f
oss
SD
rss
iss
gd
gs
g
V
V
DD
DS
=10V, RL=10Ω, I
V
=10V,V
V
V
V
V
V
V
DS
GEN
DS
V
V
V
I
GS
GS
GS
DS
S
DS
DS
=0V,V
DS
Dual N Channel Enhancement Mode MOSFET
=VGS,I
V
=1.7A,V
=4.5V, RG=10Ω
=4.5V,I
=2.5V,I
=0V,I
≦5V,V
Condition
=20V,V
=20V,V
DS
=5V,I
T
f=1MHz
=8V,V
GS
J
=85℃
=4.5V,V
GS
D
D
GS
D
=250uA
=+/-20V
=250uA
D
D
GS
=3.6A
GS
GS
=4.5V
=6.0A
=5.0A
GS
=0V
=0V
=0V
=0V
D
DS
=1.0A,
=4A
STN8205AA
Min
STN8205AA 2007. V1
0.6
20
6
0.024 0.030
0.032 0.042
122
10.5
Typ
14
45
20
805
155
0.8
2.5
2.1
10
6
6.0A
±100
Max Unit
1.2
1.2
1
5
nS
nA
uA
nC
pF
Ω
V
V
A
S
V