stn8205aa Stanson Technology Co., Ltd., stn8205aa Datasheet

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stn8205aa

Manufacturer Part Number
stn8205aa
Description
Dual N Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
stn8205aaST8RG
Manufacturer:
STANSON
Quantity:
20 000
DESCRIPTION
STN8205AA is the dual N-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, such as notebook computer power
management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSSOP-8
ORDERING INFORMATION
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
※ ST8205AAST8RG
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)
STN8205AAST8RG
Part Number
S:Subcontractor
Y: Year
A: Week Code
D1
D2
1
8
S2
7
S1
STN8205AA
2
SYA
S2
6
S1
3
G2
5
G1
4
ST8 : TSSOP-8; R: Tape Reel ; G: Pb – Free
Package
TSSOP-8
FEATURE
20V/6.0A, R
20V/5.0A, R
Super high density cell design for extremely
low R
Exceptional low on-resistance and maximum
DC current capability
TSSOP-8 package design
Dual N Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
DS(ON)
= 30m-ohm@V
=42m-ohm@V
STN8205AA
Part Marking
STN8205AA 2007. V1
SYA
GS
GS
=4.5V
=2.5V
6.0A

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stn8205aa Summary of contents

Page 1

... DESCRIPTION STN8205AA is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required ...

Page 2

... STN8205AA Dual N Channel Enhancement Mode MOSFET Symbol V DSS V GSS T =25℃ =70℃ =25℃ =70℃ STG R θJA 6.0A Typical Unit 20 V +/-20 V 6 2.0 W 1.2 -40/140 ℃ -55/150 ℃ 105 /W ℃ STN8205AA 2007. V1 ...

Page 3

... V =8V oss f=1MHz C rss T d(on =10V, RL=10Ω =4.5V, RG=10Ω T GEN d(off STN8205AA 6.0A Min Typ 20 0.6 =0V =0V 6 0.024 0.030 0.032 0.042 10 0.8 =0V 10.5 2.5 =4A DS 2.1 805 =0V 155 122 14 =1.0A STN8205AA 2007. V1 Max Unit V 1.2 V ±100 Ω ...

Page 4

... TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205AA Dual N Channel Enhancement Mode MOSFET STN8205AA 2007. V1 6.0A ...

Page 5

... TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205AA Dual N Channel Enhancement Mode MOSFET STN8205AA 2007. V1 6.0A ...

Page 6

... TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205AA Dual N Channel Enhancement Mode MOSFET STN8205AA 2007. V1 6.0A ...

Page 7

... TSSOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STN8205AA Dual N Channel Enhancement Mode MOSFET STN8205AA 2007. V1 6.0A ...

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