PSMN9R0-25YLC_1111 PHILIPS [NXP Semiconductors], PSMN9R0-25YLC_1111 Datasheet - Page 8

• Manufacturer Part Number: PSMN9R0-25YLC_1111
• Description: N-channel 25 V 9.1 m? logic level MOSFET in LFPAK using NextPower technology
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
PSMN9R0-25YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
D
(S)
g
10
10
10
10
10
10
60
fs
40
20
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
Min
1
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Typ
Max
40
2
V
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003aag201
I
003aag203
D
GS
(A)
(V)
Rev. 2 — 1 November 2011
60
3
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
GS(th)
(V)
I
D
60
40
20
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Min (5mA)
Max (1mA)
0
1
PSMN9R0-25YLC
T
j
I
= 150 ° C
D
= 5mA
60
2
1mA
120
T
3
j
= 25 ° C
© NXP B.V. 2011. All rights reserved.
003aag204
003aag202
V
T
GS
j
( ° C)
(V)
180
4
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