PSMN1R0-30YLC_11 PHILIPS [NXP Semiconductors], PSMN1R0-30YLC_11 Datasheet - Page 3

• Manufacturer Part Number: PSMN1R0-30YLC_11
• Description: N-channel 30 V 1.15 m? logic level MOSFET in LFPAK using NextPower technology
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
PSMN1R0-30YLC
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
ESD
DS(AL)S
Continuous current is limited by package.
(A)
I
D
400
320
240
160
80
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
electrostatic discharge voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
50
(1)
100
150
All information provided in this document is subject to legal disclaimers.
T
003a a e 940
mb
(  C)
200
Conditions
25 °C ≤ T
25 °C ≤ T
V
V
pulsed; t
see
T
MM (JEDEC JESD22-A115)
T
pulsed; t
V
V
see
mb
mb
GS
GS
GS
sup
Rev. 4 — 4 July 2011
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
Figure 4
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
p
p
j
j
≤ 10 µs; T
≤ 10 µs; T
≤ 175 °C
≤ 175 °C; R
Fig 2.
mb
mb
j(init)
GS
= 25 °C; see
= 100 °C; see
= 50 Ω; unclamped;
P
Figure 2
(%)
= 25 °C; I
der
120
80
40
mb
mb
0
function of mounting base temperature
Normalized total power dissipation as a
GS
0
= 25 °C;
= 25 °C
= 20 kΩ
D
= 100 A;
Figure 1
Figure 1
50
PSMN1R0-30YLC
100
[1]
[1]
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
960
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
-
Max
30
30
20
100
100
1450
272
175
260
100
1450
259
03na19
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
°C
V
A
A
mJ
3 of 15