PSMN004-36B NXP [NXP Semiconductors], PSMN004-36B Datasheet - Page 3

• Manufacturer Part Number: PSMN004-36B
• Description: N-channel TrenchMOS SiliconMAX logic level FET
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN004-36B_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
Fig 1.
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
(%)
I
D
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
source current
peak source current
non-repetitive
drain-source avalanche
energy
non-repetitive
avalanche current
50
100
Conditions
T
T
V
V
t
T
pulsed; δ = 25 %; t
t
V
unclamped; t
V
unclamped
T
p
p
150
j
j
mb
mb
GS
GS
GS
sup
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
Tmb (°C)
All information provided in this document is subject to legal disclaimers.
= 25 °C; see
= 25 °C
= 5 V; T
= 5 V; T
= 5 V; T
= 15 V; V
03ag42
200
j
j
mb
mb
j(init)
Rev. 02 — 1 March 2010
p
≤ 175 °C
≤ 175 °C; R
GS
= 0.1 ms; R
= 100 °C; see
= 25 °C; see
= 25 °C; I
= 5 V; T
Figure 2
p
mb
mb
≤ 50 µs; T
= 25 °C; see
= 25 °C
j(init)
GS
Fig 2.
GS
D
N-channel TrenchMOS SiliconMAX logic level FET
= 75 A; V
= 20 kΩ
Figure 1
= 50 Ω
= 25 °C; R
P
Figure 1
(%)
j
der
120
≤ 150 °C
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 3
and
sup
GS
= 15 V;
3
= 50 Ω;
50
PSMN004-36B
100
Min
-
-
-15
-
-
-
-
-55
-55
-20
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
Max
36
36
15
75
75
240
230
175
175
20
75
240
120
75
03aa16
(°C)
200
V
°C
°C
Unit
V
V
A
A
A
W
V
A
A
mJ
A
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