PSMN002-25B PHILIPS [NXP Semiconductors], PSMN002-25B Datasheet
PSMN002-25B
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PSMN002-25B Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 01 — 22 October 2001 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ Product availability: PSMN002-25P in SOT78 (TO-220AB) PSMN002-25B in SOT404 (D 2. Features Low on-state resistance Fast switching. 3. Applications High frequency computer motherboard converters OR-ing applications. ...
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... peak source (diode forward) current T SM Avalanche ruggedness E non-repetitive avalanche energy AS I non-repetitive avalanche current AS 9397 750 08315 Product data PSMN002-25 series N-channel enhancement mode field-effect transistor Conditions 175 ...
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... der Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 01 — 22 October 2001 PSMN002-25 series 03af36 120 150 180 T mb (º ------------------- 100 03af38 10µs 100 µ ...
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... Product data N-channel enhancement mode field-effect transistor Conditions Figure 4 vertical in still air; SOT78 package mounted on a printed circuit board; minimum footprint; SOT404 package Rev. 01 — 22 October 2001 PSMN002-25 series Value Unit 0. 03af37 (s) © ...
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... Source-drain diode V source-drain (diode forward) voltage I SD 9397 750 08315 Product data PSMN002-25 series N-channel enhancement mode field-effect transistor Conditions I = 0. ...
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... V 0 0.4 0 400 500 ---------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 22 October 2001 PSMN002-25 series 03af41 V DS > DSon 175 º º (V) GS > DSon 03af18 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03af44 (pF iss C oss rss (V) Rev. 01 — 22 October 2001 PSMN002-25 series 03aa36 min typ max 0.5 1 1 © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 22 October 2001 PSMN002-25 series 03af45 ºC 50 100 150 Q G (nC © Koninklijke Philips Electronics N.V. 2001. All rights reserved. ...
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... 0.7 15.8 6.4 10.3 15.0 2.54 0.4 15.2 5.9 9.7 13.5 REFERENCES JEDEC EIAJ 3-lead TO-220AB SC-46 Rev. 01 — 22 October 2001 PSMN002-25 series base ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 00-09-07 01-02-16 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. SOT78 ...
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... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC EIAJ Rev. 01 — 22 October 2001 PSMN002-25 series 2 -PAK); 3 leads mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 99-06-25 01-02-12 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. SOT404 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20011022 Product Data; Initial Version 9397 750 08315 Product data PSMN002-25 series N-channel enhancement mode field-effect transistor Rev. 01 — 22 October 2001 © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... Rev. 01 — 22 October 2001 Rev. 01 — 22 October 2001 PSMN002-25 series PSMN002-25 series Fax: + 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 October 2001 Document order number: 9397 750 08315 PSMN002-25 series N-channel enhancement mode field-effect transistor ...