RJK2006DPE-00-J3 RENESAS [Renesas Technology Corp], RJK2006DPE-00-J3 Datasheet - Page 5

• Manufacturer Part Number: RJK2006DPE-00-J3
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

RJK2006DPJ, RJK2006DPE, RJK2006DPF
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 5 of 7
0.03
0.01
0.3
0.1
Vin
10 V
3
1
10 μ
Vin Monitor
10 Ω
Switching Time Test Circuit
D = 1
0.5
100 μ
D.U.T.
Normalized Transient Thermal Impedance vs. Pulse Width
R
V
= 100 V
L
DD
1 m
Vout
Monitor
Pulse Width
10 m
td(on)
PW (s)
Vout
Vin
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
P
DM
100 m
10%
10%
90%
tr
Waveform
PW
T
td(off)
1
90%
Tc = 25°C
D =
90%
PW
T
10%
10
t f