RJK2006DPE-00-J3 RENESAS [Renesas Technology Corp], RJK2006DPE-00-J3 Datasheet - Page 4

• Manufacturer Part Number: RJK2006DPE-00-J3
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

RJK2006DPJ, RJK2006DPE, RJK2006DPF
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 4 of 7
10000
1000
100
10
50
20
10
30
40
0
0
0
Drain to Source Voltage V
Source to Drain Voltage V
Ta = 25°C
V
f = 1 MHz
Source to Drain Voltage (Typical)
V
Ta = 25 °C
Pulse Test
GS
GS
Reverse Drain Current vs.
= 0
0.4
Drain to Source Voltage
= 0 V
Typical Capacitance vs.
0.8
50
1.2
1.6
DS
SD
Ciss
Coss
Crss
(V)
(V)
100
2.0
400
300
200
100
5
4
3
2
1
0
Dynamic Input Characteristics (Typical)
0
-25
I
Ta = 25 °C
V
D
vs. Case Temperature (Typical)
DS
Gate to Source Cutoff Voltage
= 40 A
Case Temperature
0
I
20
D
Gate Charge Qg (nC)
V
= 10 mA
DD
25
= 160 V
40
100 V
50
50 V
1 mA
75
60
0.1 mA
V
DD
V
100 125 150
V
Tc (°C)
DS
GS
= 160 V
80
100 V
= 10 V
50 V
100
16
12
8
4
0