MTD10N10ELT4G ONSEMI [ON Semiconductor], MTD10N10ELT4G Datasheet - Page 2

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MTD10N10ELT4G

Manufacturer Part Number
MTD10N10ELT4G
Description
TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTD10N10ELT4G
Manufacturer:
ON/安森美
Quantity:
20 000
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−to−Source On−Resistance (V
Drain−to−Source On−Voltage
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge (See Figure 8)
Forward On−Voltage (Note 3)
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V
Temperature Coefficient (Positive)
(V
(V
(V
Threshold Temperature Coefficient (Negative)
(V
(V
(Measured from the drain lead 0.25″ from package to center of die)
(Measured from the source lead 0.25″ from package to source bond pad)
GS
DS
DS
DS
GS
GS
= 0 Vdc, I
= 100 Vdc, V
= 100 Vdc, V
= V
= 5.0 Vdc, I
= 5.0 Vdc, I
GS
, I
D
D
= 250 mAdc)
= 0.25 mAdc)
D
D
GS
GS
= 10 Adc)
= 5.0 Adc, T
= 0 Vdc)
= 0 Vdc, T
DS
Characteristic
GS
= 15 Vdc, I
J
= ± 15 Vdc, V
J
= 125°C)
(V
= 125°C)
(I
DS
S
(T
= 10 Adc, V
GS
= 25 Vdc, V
(V
(V
J
V
D
(I
(I
= 25°C unless otherwise noted)
= 5.0 Vdc, I
GS
DD
DS
S
S
= 5.0 Adc)
= 10 Adc, V
= 10 Adc, V
DS
= 5.0 Vdc, R
dI
= 50 Vdc, I
= 80 Vdc, I
V
S
= 0 Vdc)
GS
/dt = 100 A/ms)
GS
GS
= 5.0 Vdc)
= 0 Vdc, T
http://onsemi.com
D
= 0 Vdc, f = 1.0 MHz)
MTD10N10EL
= 5.0 Adc)
GS
GS
D
D
G
= 10 Adc,
= 10 Adc,
= 0 Vdc)
= 0 Vdc,
= 9.1 W)
J
2
= 125°C)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
DS(on)
C
V
GS(th)
C
g
d(on)
d(off)
DSS
GSS
Q
Q
Q
Q
L
L
t
t
t
FS
oss
t
t
SD
rss
RR
iss
rr
a
b
D
r
f
S
T
1
2
3
Min
100
1.0
2.5
0.898
124.7
0.539
1.45
0.17
1.85
18.9
2.56
4.66
0.98
38.7
Typ
741
175
115
4.0
7.9
9.3
4.4
4.5
7.5
74
17
38
86
11
1040
Max
0.22
100
100
250
150
2.0
2.6
2.3
1.6
10
40
20
30
80
15
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
nH
nH
pF
ns
ns
W

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