MA786WA PANASONIC [Panasonic Semiconductor], MA786WA Datasheet

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MA786WA

Manufacturer Part Number
MA786WA
Description
Silicon epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet

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Part Number
Manufacturer
Quantity
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Company:
Part Number:
MA786WA-(TX)
Quantity:
2 981
Company:
Part Number:
MA786WA-(TX)
Quantity:
2 981
Schottky Barrier Diodes (SBD)
MA3X786D
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * 1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
• Two MA3X786s are contained in one package (anode common)
• Allowing to rectify under (I
• Optimum for high-frequency rectification because of its short
• Low V
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward
current
Average forward
current
Non-repetitive peak forward
surge current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
reverse recovery time (t
Pulse Generator
(PG-10N)
R
s
* 2 : Value per chip
2. Rated input/output frequency: 250 MHz
3. * : t
= 50 Ω
F
human body and the leakage of current from the operating equipment.
Parameter
(forward rise voltage), with high rectification efficiency
Parameter
Bias Application Unit N-50BU
rr
* 1
measuring circuit
A
Single
Double
Single
Double
*
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
rr
* 2
* 2
)
F(AV)
Symbol
V
I
I
F(AV)
I
T
V
FSM
RRM
T
= 100 mA) condition
FM
stg
R
a
j
Symbol
= 25°C
V
C
a
I
t
R
rr
F
t
= 25°C
V
−55 to +125
R
Rating
300
200
100
125
t
30
30
70
r
1
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
V
I
V
I
I
= 0.35 ns
F
F
rr
= 2 µs
R
R
= 100 mA
= I
t
= 10 mA, R
p
= 30 V
= 0 V, f = 1 MHz
R
= 100 mA
t
Unit
mA
mA
°C
°C
V
V
A
Conditions
L
I
F
= 100 Ω
I
I
R
Output Pulse
F
R
L
= 100 mA
= 100 mA
= 100 Ω
I
t
rr
rr
= 10 mA
Marking Symbol: M3Y
Internal Connection
t
0.65 ± 0.15
0.1 to 0.3
0.4 ± 0.2
Min
1 : Cathode 1
2 : Cathode 2
3 : Anode 1, 2
1
2
1
2
Typ
1.5
20
2.8
Mini Type Package(3-pin)
2
− 0.05
+ 0.25
+ 0.2
− 0.3
JEDEC : TO-236
EIAJ : SC-59
Max
0.55
3
15
3
0.65 ± 0.15
Unit : mm
Unit
µA
pF
ns
V
1

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MA786WA Summary of contents

Page 1

Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Two MA3X786s are contained in one package (anode common) • Allowing to rectify under (I F(AV) • Optimum for ...

Page 2

MA3X786D  75°C 25° 125°C − 20° −1 10 − 0.1 0.2 0.3 0.4 0.5 0.6 Forward voltage  V ...

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