DS1220AB-100-IND DALLAS [Dallas Semiconductor], DS1220AB-100-IND Datasheet - Page 8

• Manufacturer Part Number: DS1220AB-100-IND
• Description: 16k Nonvolatile SRAM
• Manufacturer: DALLAS [Dallas Semiconductor]

7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
9. Each DS1220AB and each DS1220AD has a built-in switch that disconnects the lithium source until
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
11. In a power down condition the voltage on any pin may not exceed the voltage on V
12. t
13. t
14. DS1220AB and DS1220AD modules are recognized by Underwriters Laboratory (U.L. ) under file
DC TEST CONDITIONS
Outputs Open
All Voltages Are Referenced to Ground
ORDERING INFORMATION
buffers remain in a high-impedance state during this period.
the output buffers remain in a high-impedance state during this period.
V
V
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
E99151.
WR1
WR2
CC
CC
starting from the time power is first applied by the user.
is first applied by the user. The expected t
, t
, t
DH1
DH2
are measured from WE going high.
are measured from CE going high.
8 of 9
DR
is defined as accumulative time in the absence of
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
CC
.
DS1220AB/AD