DS1220AB-170 DALLAS [Dallas Semiconductor], DS1220AB-170 Datasheet
DS1220AB-170
Related parts for DS1220AB-170
DS1220AB-170 Summary of contents
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FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces volatile static RAM or EEPROM Unlimited write cycles Low-power CMOS JEDEC standard 28-pin DIP package ...
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READ MODE The DS1225AB and DS1225AD execute a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable) and OE (Output Enable) are active (low). The unique address specified by the 13 address inputs ( ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground Operating Temperature Storage Temperature Soldering Temperature This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation ...
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... WR1 t 10 WR2 25 t ODW 5 t OEW DH1 t 10 DH2 DS1225AB/AD =5V ± 5% for DS1225AB See Note 10) A =5V ± 10% for DS1225AD) CC DS1220AB-85 DS1220AD-85 UNITS NOTES MIN MAX ...
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... OH t 150 WC t 100 WR1 t 10 WR2 35 t ODW 5 t OEW DH1 t 10 DH2 DS1225AB/AD DS1220AB-200 DS1220AD-200 UNITS NOTES MIN MAX 200 ns 200 ns 100 ns 200 200 ns 100 ...
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READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTES AND 12 WRITE CYCLE 2 SEE NOTES AND DS1225AB/AD ...
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POWER-DOWN/POWER-UP CONDITION SEE NOTE 11 POWER-DOWN/POWER-UP TIMING PARAMETER CE V before Power-Down slew from slew from after Power-Up IH PARAMETER Expected ...
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NOTES high for a read cycle state specified as the logical AND of CE and going low ...
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ORDERING INFORMATION DS1225AB/AD ...
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DS1225AB/AD NONVOLATILE SRAM, 28-PIN, 720-MIL EXTENDED MODULE PKG 28-PIN DIM MIN A IN. 1.520 MM 38.61 B IN. 0.695 MM 17.65 C IN. 0.395 MM 10.03 D IN. 0.100 MM 2.54 E IN. 0.017 MM 0.43 F IN. 0.120 MM ...