DS1112SG55 DYNEX [Dynex Semiconductor], DS1112SG55 Datasheet - Page 5
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DS1112SG55
Manufacturer Part Number
DS1112SG55
Description
Rectifier Diode
Manufacturer
DYNEX [Dynex Semiconductor]
Datasheet
1.DS1112SG55.pdf
(7 pages)
www.dynexsemi.com
10000
1000
0.001
Fig.6 Maximum (limit) transient thermal impedance -
100
0.01
0.1
0.001
0.1
Conditions:
T
V
I
F
j
R
= 150˚C
= 1000A
= 100V
Rate of decay of forward current, dI
Fig.4 Total stored charge
0.01
junction to case
1.0
Time - (s)
3 phase 120˚
6 phase 60˚
Conduction
Halfwave
0.1
d.c.
Effective thermal resistance
10
Double side
dI
Junction to case ˚C/W
Double side cooled
Anode side cooled
0.032
0.034
0.044
0.057
F
F
/dt
/dt - (A/µs)
I
F
1.0
Single side
I
RM
Q
0.064
0.066
0.076
0.089
S
100
10
Fig.5 Surge (non-repetitive) forward current vs time (with
30
25
20
15
10
35
5
0
1
I
2
t
ms
50% V
10
RRM
Duration
1
at T
2 3
Cycles at 50Hz
case
125˚C)
5
10
I
2
t = Î
DS1112SG
20
2
2
x t
50
400
350
300
250
200
150
100
50
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