DS1112SG55 DYNEX [Dynex Semiconductor], DS1112SG55 Datasheet - Page 4
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DS1112SG55
Manufacturer Part Number
DS1112SG55
Description
Rectifier Diode
Manufacturer
DYNEX [Dynex Semiconductor]
Datasheet
1.DS1112SG55.pdf
(7 pages)
DS1112SG
CHARACTERISTICS
CURVES
V
V
4/7
FM
FM
Symbol
2500
2000
1500
1000
Equation:-
= A + Bln (I
500
V
V
I
Q
r
RM
I
FM
rr
TO
T
0
0.5
S
Fig.2 Maximum (limit) forward characteristics
Measured under pulse
conditions
Reverse recovery current
Forward voltage
Peak reverse current
Total stored charge
Slope resistance
Threshold voltage
F
) + C.I
Instantaneous forward voltage, V
T
j
F
= 25˚C
+D. I
1.5
F
Parameter
T
j
= 150˚C
2.5
F
- (V)
I
T
At T
3.5
At 1800A peak, T
At V
At T
F
case
= 1000A, dI
vj
vj
RRM
= 150˚C, V
= 150˚C
= 150˚C
Where
these values are valid for T
, T
case
2500
2000
1500
1000
500
= 150
0
RR
0
/dt = 3A/ s
R
Conditions
= 100V
case
o
C
= 25
A = 1.249986
B = –0.17646
C = 0.000524
D = 0.041024
3 phase
o
Fig.3 Dissipation curves
C
500
Mean forward current, I
Half wave
j
= 125˚C for I
1000
www.dynexsemi.com
dc
F(AV)
Min.
F
500A to 2500A
-
-
-
-
-
-
- (A)
1500
Max.
3000
0.93
2.1
0.9
90
75
Units
m
mA
2000
V
A
V
C