en29lv010-45rtip Eon Silicon Solution Inc., en29lv010-45rtip Datasheet - Page 9

• Manufacturer Part Number: en29lv010-45rtip
• Description: Da0. 1 Megabit 128k X 8-bit Uniform Sector Cmos 3.0 Volt-only Flash Memory
• Manufacturer: Eon Silicon Solution Inc.

Read
Reset
Program
Unlock Bypass
Unlock Bypass Program
Unlock Bypass Reset
Chip Erase
Sector Erase
Erase Suspend
Erase Resume
Manufacturer ID
Device ID
Sector Protect Verify
COMMAND DEFINITIONS
The operations of the EN29LV010 are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register.
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,
incorrect data values or improper sequences will reset the device to Read Mode.
Table 5. EN29LV010 Command Definitions
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Don’t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A16-A14 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array data
using the standard read timings, with the only difference in that if it reads at an address within erase
suspended sectors, the device outputs status data. After completing a programming operation in the
Erase Suspend mode, the system may once again read array data with the same exception.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Command
Sequence
1
1
4
4
3
2
6
6
1
4
4
2
1
XXX
555
Add
RA
Xxx
555
555
555
555
555
XXX
555
xxx
xxx
Cycle
1
st
Data
RD
AA
AA
AA
AA
AA
A0
AA
AA
30
F0
90
B0
Rev. C, Issue Date: 2008/04/23
Add
2AA
2AA
2AA
2AA
2AA
PA
XXX
2AA
2AA
Cycle
2
nd
Data
55
55
55
55
55
PD
00
55
55
9
Add
555
555
555
555
555
555
555
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Cycle
3
rd
Data
90
90
90
A0
20
80
80
Bus Cycles
Add
100
X01
(SA)
X02
PA
555
555
Cycle
4
th
Data
1C
6E
00/
01
PD
AA
AA
The sequences for the
EN29LV010
Add
2AA
2AA
Cycle
5
th
Data
55
55
Add
555
SA
Cycle
6
th
Data
10
30