glt4161l16 G-Link Technology Corporation, glt4161l16 Datasheet - Page 3

• Manufacturer Part Number: glt4161l16
• Description: 1m X 16 Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: G-Link Technology Corporation

Absolute Maximum Ratings*
Operating Temperature, T
*Note:Operation above Absolute Maximum Ratings can
Electrical Specifications
Block Diagram :
Storage Temperature(plastic)....-55°C to +150°C
Voltage Relative to V
Short Circuit Output Current......................50mA
Power Dissipation......................................1.0W
All voltages are referenced to GND.
After power up, wait more than 100µs and then, execute eight
refresh cycles as dummy cycles to initialize internal circuit.
abversely affect device reliability.
CAS
UCAS
LCAS
A0
A9
G -LINK
RAS
|
WE
GND
Vcc
.....................................…0°C to +70°C
means
UCAS
Generator
Address
Address
Column
RAS Counter
Buffer
Buffer
Clock
CAS before
Row
SS
...............-1.0V to + 4.6V
and
A
X0..X9
(ambient)
Y0..Y9
LCAS
Web : www.glink.com.tw
G-Link Technology Corporation, Taiwan
.
TEL : [phone]
Control
Upper
Byte
1M X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Sense Amplifier
1024X1024X16
Column Decoder
...1024X16...
Memory
....1024....
- 3 -
Array
Email : [e-mail]
Capacitance*
T
Symbol
A
*Note: Capacitance is sampled and not 100% tested
C
=25°C, V
C
C
OUT
Control
IN1
IN2
Lower
Byte
X1
6
Address Input
Data Input/Output
RAS
CC
=3.3V±0.3V, V
,
X8
LCAS
X8
X8
X8
CAS
Parameter
,
UCAS
Output
Output
Buffer
Buffer
Buffer
Buffer
-before-
Input
Input
Data
Data
Data
Data
,
WE
SS
X8
X8
RAS
X8
=0V
X8
,
OE
GLT4161L16
OE
or
RAS
Max.
Mar 2004 (Rev.2.3)
DQ15
DQ0
DQ7
DQ8
5
7
7
|
|
-only
Unit
pF
pF
pF