glt4160m16 G-Link Technology Corporation, glt4160m16 Datasheet - Page 3

• Manufacturer Part Number: glt4160m16
• Description: 1m X 16 Cmos Dynamic Ram With Extended Data Output
• Manufacturer: G-Link Technology Corporation

Absolute Maximum Ratings*
Operating Temperature, T
*Note:Operation above Absolute Maximum Ratings can
Electrical Specifications
Block Diagram :
………………………..(extended)..–25 C to +85 C
Storage Temperature(plastic).….-55 C to +150 C
Voltage Relative to V
Short Circuit Output Current.........…...........50mA
Power Dissipation........................….............1.0W
l
l
l
All voltages are referenced to GND.
After power up, wait more than 200 s and then, execute eight
refresh cycles as dummy cycles to initialize internal circuit.
abversely affect device reliability.
CAS
UCAS
LCAS
A0
A9
G -LINK
RAS
|
WE
GND
Vcc
.....................................…0 C to +70 C
means
UCAS
Generator
Address
Address
Column
RAS Counter
Buffer
Buffer
Clock
CAS before
Row
SS
........….....-1.0V to + 3.5V
and
A
X0..X9
(ambient)
Y0..Y9
LCAS
Web : www.glink.com.tw
G-Link Technology Corporation,Taiwan
1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
.
Control
TEL : [phone]
Upper
Byte
Sense Amplifier
1024X1024X16
Column Decoder
...1024X16...
Memory
....1024....
- 3 -
Array
Email : [e-mail]
Capacitance*
T
Symbol
A
*Note: Capacitance is sampled and not 100% tested
C
=25 C, V
C
C
OUT
Control
IN1
IN2
Lower
Byte
X1
6
Address Input
Data Input/Output
RAS
CC
=2.5V 0.2V, V
,
X8
X8
LCAS
X8
X8
Parameter
CAS
,
UCAS
Output
Output
Buffer
Buffer
Buffer
Buffer
Input
Input
Data
Data
Data
Data
-before-
,
WE
SS
X8
X8
X8
=0V
X8
,
RAS
OE
GLT4160M16
OE
or
Max. Unit
Feb 2004 (Rev.1.2)
DQ15
RAS
DQ0
DQ7
DQ8
5
7
7
|
|
-only
pF
pF
pF