RF5111PCBA-41X RFMD [RF Micro Devices], RF5111PCBA-41X Datasheet - Page 7

• Manufacturer Part Number: RF5111PCBA-41X
• Description: 3V DCS POWER AMPLIFIER
• Manufacturer: RFMD [RF Micro Devices]

RF5111
Because of the inverting stage at the APC input, the current through the PIN diode is inverted from the APC voltage.
Thus, when V
is high for maximum output power, the attenuator is turned off to obtain maximum drive level for the
APC
first RF stage. When V
is low for maximum isolation, the attenuator is be turned on to reduce the drive level and to
APC
avoid self-biasing.
The PIN diode is dimensioned such that a low V
the impedance of the diode is about 50 Ohm. Since the input imped-
APC
ance of the first RF stage become very high when the bias is turned off, this topology will maintain a good input imped-
ance over the entire V
control range.
APC
VCC1 and VCC2 provide supply voltage to the first and second stage, as well as provides some frequency selectivity to
tune to the operating band. Essentially, the bias is fed to this pin through a short microstrip. A bypass capacitor sets the
inductance seen by the part, so placement of the bypass cap can affect the frequency of the gain peak. This supply
should be bypassed individually with 100pF capacitors before being combined with V
for the output stage to prevent
CC
feedback and oscillations.
The RF OUT pin provides the output power. Bias for the final stage is fed to this output line, and the feed must be capa-
ble of supporting the approximately 1.5A of current required. Care should be taken to keep the losses low in the bias
feed and output components. A narrow microstrip line is recommended because DC losses in a bias choke will degrade
efficiency and power.
While the part is safe under CW operation, maximum power and reliability will be achieved under pulsed conditions. The
data shown in this data sheet is based on a 12.5% duty cycle and a 600μs pulse, unless specified otherwise.
The part will operate over a 3.0V to 5.0V range. Under nominal conditions, the power at 3.5V will be greater than
+32dBm at +85°C. As the voltage is increased, however, the output power will increase. Thus, in a system design, the
ALC (Automatic Level Control) Loop will back down the power to the desired level. This must occur during operation, or
the device may be damaged from too much power dissipation. At 5.0V, over +36dBm may be produced; however, this
level of power is not recommended, and can cause damage to the device.
The HBT breakdown voltage is >20V, so there is no issue with overvoltage. However, under worst-case conditions, with
the RF drive at full power during transmit, and the output VSWR extremely high, a low load impedance at the collector of
the output transistors can cause currents much higher than normal. Due to the bipolar nature of the devices, there is no
limitation on the amount of current the device will sink, and the safe current densities could be exceeded.
High current conditions are potentially dangerous to any RF device. High currents lead to high channel temperatures and
may force early failures. The RF5111 includes temperature compensation circuits in the bias network to stabilize the RF
transistors, thus limiting the current through the amplifier and protecting the devices from damage. The same mechanism
works to compensate the currents due to ambient temperature variations.
To avoid excessively high currents it is important to control the V
when operating at supply voltages higher than 4.0V,
APC
such that the maximum output power is not exceeded.
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