rf5111 RF Micro Devices, rf5111 Datasheet

no-image

rf5111

Manufacturer Part Number
rf5111
Description
3v Dcs Power Amplifier Rf5111
Manufacturer
RF Micro Devices
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RF5111
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
rf5111PCK-410
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
rf5111SB
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
rf5111SR
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
rf5111TR7
Manufacturer:
RFMD
Quantity:
5 000
Features
Applications
Rev A1 DS060921
Single 2.7V to 4.8V Supply Volt-
age
+33dBm Output Power at 3.5V
27dB Gain with Analog Gain Con-
trol
50% Efficiency
1700MHz to 1950MHz Opera-
tion
Supports DCS1800 and
PCS1900
3V DCS1800 (PCN) Cellular
Handsets
3V DCS1900 (PCS) Cellular
Handsets
3V Dual-Band/Triple-Band Hand-
sets
Commercial and Consumer Sys-
tems
Portable Battery-Powered Equip-
ment
GPRS Compatible
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Product Description
The RF5111 is a high-power, high-efficiency power amplifier module offering high
performance in GSM or GPRS applications. The device is manufactured on an
advanced GaAs HBT process, and has been designed for use as the final RF ampli-
fier in DCS1800/1900 handheld digital cellular equipment and other applications
in the 1700MHz to 2000MHz band. On-board power control provides over 65dB of
control range with an analog voltage input, and provides power down with a logic
“low” for standby operation. The device is self-contained with 50Ω input and the
output can be easily matched to obtain optimum power and efficiency characteris-
tics. The RF5111 can be used together with the RF5110 for dual-band operation.
The device is packaged in an ultra-small plastic package, minimizing the required
board space.
Ordering Information
RF5111
RF5111PCBA-41X
GaAs HBT
GaAs MESFET
InGaP HBT
Optimum Technology Matching® Applied
VAT EN
3V DCS Power Amplifier
Fully Assembled Evaluation Board
GND1
VCC1
RF IN
SiGe BiCMOS
Si BiCMOS
SiGe HBT
Functional Block Diagram
1
2
3
4
16
5
15
6
RoHS Compliant & Pb-Free Product
3V DCS POWER AMPLIFIER
Package Style: QFN, 16-Pin, 3 x 3
14
GaAs pHEMT
Si CMOS
Si BJT
7
13
8
12
11
10
9
RF OUT
RF OUT
RF OUT
NC
RF5111
GaN HEMT
1 of 14

Related parts for rf5111

rf5111 Summary of contents

Page 1

... The device is self-contained with 50Ω input and the output can be easily matched to obtain optimum power and efficiency characteris- tics. The RF5111 can be used together with the RF5110 for dual-band operation. The device is packaged in an ultra-small plastic package, minimizing the required board space ...

Page 2

... RF5111 Absolute Maximum Ratings Parameter Supply Voltage Power Control Voltage (V ) APC Enable Voltage (V ) AT_EN DC Supply Current Input RF Power Duty Cycle at Max Power Output Load VSWR Operating Case Temperature Storage Temperature Parameter Min. Overall Operating Frequency Range Usable Frequency Range Maximum Output Power +32 ...

Page 3

... V 4.8 V 5.5 V 1.3 A 295 mA μ μ RF5111 Condition Maximum P , Voltage supplied to the input OUT Minimum P , Voltage supplied to the input OUT V =0.3V to 2.8V, V =2.7V, AT_EN APC1,2 P =+8dBm IN P =-10dBm to +33dBm OUT DC to 2MHz V =2.8V APC1,2 V =0V APC1,2 Specifications Nominal operating limits, P < ...

Page 4

... RF5111 Pin Function Description 1 VAT EN Control pin for the pin diode. The purpose of the pin diode is to attenuate RF drive level when V the device caused by self-biasing under high RF drive levels. A good input match is maintained when the input stage bias is turned off by the same mechanism ...

Page 5

... RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS060921 Package Drawing 0. -A- 1.00 2 PLCS 3.00 SQ. 0.85 1.50 TYP 0.80 0.65 2 PLCS 0. 12° MAX -B- 1.37 TYP Dimensions in mm. 2.75 SQ. 2 PLCS 0. 0.60 0.30 0.24 0.18 TYP 0.45 0.00 4 PLCS 0.23 0.13 4 PLCS 0.55 0.30 0.50 RF5111 Interface Schematic VCC2 From Bias GND2 Stages Same as pin 14. Same as pin 14. 0.05 C 0.05 0.01 SEATING PLANE -C- 1.65 SQ. 1. ...

Page 6

... RF5111 Theory of Operation and Application Information The RF5111 is a three-stage device with 28 dB gain at full power. Therefore, the drive required to fully saturate the output is +5dBm. Based upon HBT (Heterojunction Bipolar Transistor) technology, the part requires only a single positive 3V supply to operate to full specification. Power control is provided through a single pin interface, with a separate Power Down control pin. ...

Page 7

... High current conditions are potentially dangerous to any RF device. High currents lead to high channel temperatures and may force early failures. The RF5111 includes temperature compensation circuits in the bias network to stabilize the RF transistors, thus limiting the current through the amplifier and protecting the devices from damage. The same mechanism works to com- pensate the currents due to ambient temperature variations ...

Page 8

... RF5111 Distance between edge of device and capacitor is 0.240" to improve the "off" isolation 15 pF 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com Application Schematic Instead of a stripline, an inductor ...

Page 9

... Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS060921 Internal Schematic VCC1 APC1 VCC 500 Ω 320 Ω 2.5k Ω 2.5k Ω GND1 RF5111 VCC2 RF OUT APC2 VCC 200 Ω 1.5k Ω PKG BASE PKG BASE ...

Page 10

... RF5111 Dual-Band DCS/PCS Lumped Element VAT EN C25 C24 Ω μstrip 1.2 nH VCC 100 mils C3 C3A 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. ...

Page 11

... Board Thickness 0.032”, Board Material FR-4, Multi-Layer 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS060921 Evaluation Board Layout Board Size 2.0” x 2.0” RF5111 ...

Page 12

... Pulse Generator Notes about testing the RF5111 The test setup shown above includes two attenuators. The 3dB pad at the input is to minimize the effects that the switching of the input impedance of the PA has on the signal generator. When V change can cause the signal generator to vary its output signal, either in output level or in frequency. Instead of an attenuator an isolator may also be used ...

Page 13

... Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev A1 DS060921 PCB Design Requirements A = 0.64 x 0.28 (mm) Typ 0.28 x 0.64 (mm) Typ 1.50 (mm) Sq. Dimensions in mm. 1.50 Typ. 0.50 Typ. Pin Pin Pin 8 0.55 Typ. 0.75 Typ. RF5111 Pin 12 0.75 Typ. 1.50 Typ ...

Page 14

... RF5111 PCB Solder Mask Pattern Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be provided in the master data or requested from the PCB fabrication supplier ...

Related keywords