is27hc010 Integrated Silicon Solution, Inc., is27hc010 Datasheet - Page 8

• Manufacturer Part Number: is27hc010
• Description: 131,072 X 8 High-speed Cmos Eprom
• Manufacturer: Integrated Silicon Solution, Inc.

IS27HC010
DC PROGRAMMING CHARACTERISTICS
SWITCH PROGRAMMING CHARACTERISTICS
Notes:
1. V
2. V
3. When programming IS27HC010, a 0.1 F capacitor is required across V
4. Programming characteristics are sampled but not 100% tested at worst-case conditions.
8
Symbol
JEDEC
t
Symbol Parameter
V
V
V
V
V
I
I
I
V
V
t
which may damage the device.
t
t
t
t
t
t
ELEH
t
LI
CC
PP
GHQZ
t
GHAX
EHDX
t
GLQV
CC
PP
AVEL
DZGL
DVEL
ELPL
VPS
VCS
OH
OL
IH
IL
H
CC
PP
must be
must be applied simultaneously or before V
1
Output HIGH Voltage During Verify
Output LOW Voltage During Verify
Input HIGH Voltage
Input LOW Voltage (All Inputs)
A9 Auto Select Voltage
Input Current (All Inputs)
V
V
Supply Voltage
Programming Voltage
Symbol
CC
PP
Std.
t
t
t
V
t
t
t
t
t
t
t
t
OES
VCS
CES
DFP
VPS
PW
DS
AH
DH
OE
AS
CC
Supply Current
Supply Current (Program & Verify)
during the entire programming and verifying procedure.
Parameter
Address Setup Time
OE
Data Setup Time
Address Hold Time
Data Hold Time
OE
V
PGM
V
CE
Data Valid from
PP
CC
Setup Time
Setup Time
HIGH to Output Float Delay
Setup Time
Setup Time
Program Pulse Width
OE
PP
and removed simultaneously or after V
(1,2,3,4)
Test Conditions
I
I
V
CE
OH
OL
IN
= 2.1 mA
= –400 A
= V
= V
(T
(1,2,3,4)
A
IL
IL
,
= +25 C
or V
OE
(T
PP
IH
= V
A
and ground to suppress spurious voltage transients
= +25 C
IH
5 C)
Min.
95
—
2
2
2
0
2
0
2
2
2
5 C)
PP
Integrated Silicon Solution, Inc.
.
Max.
Min.
–0.3
11.5
12.5
130
105
150
2.4
2.0
6.0
—
—
—
—
—
—
—
—
—
—
—
—
V
CC
Max.
0.45
12.5
10.0
13.0
6.5
0.8
50
30
—
+ 0.5
Unit
ns
ns
s
s
s
s
s
s
s
s
s
ISSI
Unit
EP009-1F
mA
mA
07/18/97
V
V
V
V
V
V
V
A
®