km641003a Samsung Semiconductor, Inc., km641003a Datasheet - Page 3

• Manufacturer Part Number: km641003a
• Description: 256kx4 High Speed Static Ram 5v Operating , Revolutionary Pin Out Operated At Commercial And Industrial Temperature Range
• Manufacturer: Samsung Semiconductor, Inc.

KM641003A
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
RECOMMENDED DC OPERATING CONDITIONS
NOTE: * V
DC AND OPERATING CHARACTERISTICS
* V
CAPACITANCE*
* NOTE : Capacitance is sampled and not 100% tested.
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Input/Output Capacitance
Input Capacitance
CC
=5.0V, Temp =25 C
** V
IL
IH
(Min) = -2.0V a.c(Pulse Width 10ns) for I 20mA
(Max) = V
Parameter
Parameter
CC
Item
Supply Relative to V
CC +
Parameter
2.0V a.c (Pulse Width 10ns) for I 20mA
(
T
A
=25 C, f=1.0MHz)
SS
Symbol
V
SS
I
V
V
I
I
I
SB1
OH1*
I
LO
CC
SB
OH
LI
OL
Symbol
C
C
Symbol
I/O
IN
V
V
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
I
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
V
V
OUT
OL
OH
OH1
CC
SS
IH
IN
OUT
IN
IL
=8mA
=-4mA
= V
=0mA
=-0.1mA
V
= V
IH
IL,
CC
SS
or OE=V
V
-0.2V or V
SS
IN
to V
=V
to V
V
Test Conditions
Symbol
CC
IH
IN
(T
Test Conditions
CC
T
V
CC
- 3 -
, V
P
T
or V
STG
IH
A
CC
-0.2V,
-0.5*
IH
D
A
Min
=0 to 70 C, Vcc=5.0V 10%, unless otherwise specified)
V
4.5
2.2
V
IN
OUT
or WE=V
0
I/O
IN
IL,
0.2V
=0V
=0V
(T
A
=0 to 70 C)
IL
Typ
5.0
0
-
-
-0.5 to 7.0
-0.5 to 7.0
-65 to 150
12ns
15ns
20ns
Rating
0 to 70
MIN
1.0
-
-
V
Min
2.4
CC
-2
-2
-
-
-
-
-
-
-
Max
5.5
0.8
+0.5**
0
Max
CMOS SRAM
8
6
PRELIMINARY
Max
3.95
150
145
140
0.4
25
2
2
8
-
Unit
February 1998
W
V
V
C
C
Unit
Unit
V
V
V
V
pF
pF
Unit
mA
mA
mA
Rev 4.0
V
V
V
A
A