km641003a Samsung Semiconductor, Inc., km641003a Datasheet

no-image

km641003a

Manufacturer Part Number
km641003a
Description
256kx4 High Speed Static Ram 5v Operating , Revolutionary Pin Out Operated At Commercial And Industrial Temperature Range
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
km641003aJ-15
Manufacturer:
SEC
Quantity:
170
KM641003A
Document Title
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this
device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Range.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
History
Initial release with Preliminary.
Release to final Data Sheet.
1.1. Delete Preliminary
Update D.C parameters.
2.1. Update D.C parameters.
Add Industrial Temperature Range parts.
3.1. Add Industrial Temperature Range parts with the same parame-
3.2. Add the test condition for Voh1 with Vcc=5V 5% at 25 C
3.3. Add timing diagram to define t
4.1. Delete Industrial Temperature Range Part
4.2. Delete TSOP2 Package
4.3. Delete 17ns Part
Items
Icc
Isb
Isb1
3.1.1. Add KM641003AI parts for Industrial Temperature Range.
ters as Commercial Temperature Range parts.
3.1.2. Add ordering information.
3.1.3. Add the condition for operating at Industrial Temp. Range.
Write Cycle(CS=Controlled)
(12/15/17/20ns part)
200/190/180/170mA
Previous spec.
30mA
10mA
WP
as (Timing Wave Form of
- 1 -
(12/15/17/20ns part)
150/145/145/140mA
Updated spec.
25mA
8mA
Apr. 22th, 1995
Feb. 29th, 1996
Jul. 16th, 1996
Jun. 2nd, 1997
Feb. 25th, 1998
Draft Data
CMOS SRAM
PRELIMINARY
February 1998
Preliminary
Final
Final
Final
Final
Remark
Rev 4.0

Related parts for km641003a

km641003a Summary of contents

Page 1

... Add Industrial Temperature Range parts. 3.1. Add Industrial Temperature Range parts with the same parame- ters as Commercial Temperature Range parts. 3.1.1. Add KM641003AI parts for Industrial Temperature Range. 3.1.2. Add ordering information. 3.1.3. Add the condition for operating at Industrial Temp. Range. 3.2. Add the test condition for Voh1 with Vcc= ...

Page 2

... The KM641003A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641003A uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG s advanced CMOS process and designed for high-speed circuit technology ...

Page 3

... KM641003A ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative Voltage on V Supply Relative Power Dissipation Storage Temperature Operating Temperature * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied ...

Page 4

... OHZ PRELIMINARY CMOS SRAM Value 3ns 1.5V See below , t & t OLZ OHZ +5.0V 480 OUT 5pF* KM641003A-20 Unit Max Min Max - ...

Page 5

... WHZ (Address Controlled CS=OE (WE OLZ t LZ(4, 50 PRELIMINARY CMOS SRAM KM641003A-20 Unit Max Min Max - ...

Page 6

... KM641003A NOTES(READ CYCLE high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address and t are defined as the time at which the outputs achieve the open circuit condition and are not referenced ...

Page 7

... KM641003A TIMING WAVEFORM OF WRITE CYCLE(3) Address CS WE High-Z Data in High-Z Data out NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ; ...

Page 8

... KM641003A PACKAGE DIMENSIONS 32-SOJ-400 #32 11.18 0.12 0.440 0.005 #1 +0.10 0.43 -0.05 0. +0.004 0.017 0.0375 -0.002 #17 #16 21.36 MAX 0.841 20.95 0.12 0.825 0.005 1.30 ( 0.051 1.30 ( 0.051 +0.10 0.71 -0.05 1.27 +0.004 0.028 0.050 -0.002 - 8 - PRELIMINARY CMOS SRAM Units:millimeters/Inches 9.40 0.25 0.370 0.010 +0.10 0.20 -0.05 +0.004 0.008 -0.002 0.69 MIN 0.027 ) 0.10 3.76 MAX MAX 0.004 ) 0.148 Rev 4.0 February 1998 ...

Related keywords