k9k1208u0a Samsung Semiconductor, Inc., k9k1208u0a Datasheet - Page 24

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k9k1208u0a

Manufacturer Part Number
k9k1208u0a
Description
64m X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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Part Number:
k9k1208u0a-YIB0
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READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
READ ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Two read cycles sequentially output the manufacture code(ECH), and the device code (76H) respectively. The command regis-
ter remains in Read ID mode until further commands are issued to it. Figure 9 shows the operation sequence.
K9K1208U0A-YCB0, K9K1208U0A-YIB0
Figure 9. Read ID Operation
CLE
CE
WE
ALE
RE
I/O
0
~
7
Table2. Read Staus Register Definition
90h
I/O #
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Address. 1cycle
00h
Reserved for Future
Device Operation
Program / Erase
Write Protect
Status
Use
t
AR1
t
READID
t
24
CR
"0" : Successful Program / Erase
"1" : Error in Program / Erase
"0"
"0"
"0"
"0"
"0"
"0" : Busy
"0" : Protected
Maker code
ECh
Definition
FLASH MEMORY
"1" : Not Protected
"1" : Ready
Device code
76h

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