MRF9120R3 MOTOROLA [Motorola, Inc], MRF9120R3 Datasheet

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MRF9120R3

Manufacturer Part Number
MRF9120R3
Description
RF Power Field Effect Transistors
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies from 865 to 895 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, I
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW)
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
Rev. 7
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
Motorola, Inc. 2004
MOTOROLA RF DEVICE DATA
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power
40
Derate above 25°C
access the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 26 Watts
Power Gain — 16 dB
Efficiency — 26%
Adjacent Channel Power —
µ
″ Nominal.
750 kHz: - 45 dBc @ 30 kHz BW
1.98 MHz: - 60 dBc @ 30 kHz BW
C
= 25°C
Test Conditions
Characteristic
Freescale Semiconductor, Inc.
Rating
For More Information On This Product,
For More Information On This Product,
Go to: www.freescale.com
Go to: www.freescale.com
DQ
= 2 x 500 mA
Symbol
Symbol
V
R
V
T
P
T
DSS
stg
θJC
GS
D
J
MRF9120LR3
MRF9120R3
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 375B - 04, STYLE 1
880 MHz, 120 W, 26 V
M1 (Minimum)
1 (Minimum)
- 65 to +150
MRF9120R3 MRF9120LR3
- 0.5, +65
- 0.5, +15
Value (1)
Class
Value
1.43
0.45
250
200
NI - 860
Order this document
by MRF9120/D
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
1

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MRF9120R3 Summary of contents

Page 1

... Order this document by MRF9120/D MRF9120R3 MRF9120LR3 880 MHz, 120 LATERAL N - CHANNEL RF POWER MOSFETs CASE 375B - 04, STYLE 860 Value Unit - 0.5, +65 Vdc DSS - 0.5, +15 Vdc GS P 250 W D 1.43 W/° +150 °C stg T 200 °C J Value (1) Unit 0.45 °C/W θJC Class 1 (Minimum) M1 (Minimum) MRF9120R3 MRF9120LR3 1 ...

Page 2

... D (1) DYNAMIC CHARACTERISTICS Output Capacitance ( Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance ( Vdc ± 30 mV(rms) MHz (1) Each side of device measured separately. MRF9120R3 MRF9120LR3 2 For More Information On This Product, = 25°C unless otherwise noted) C Symbol Min I DSS I DSS I GSS ...

Page 3

... P 1dB G ps η Ψ Go to: www.freescale.com Min Typ Max Unit 15 16.5 — — % — dBc — — 16.5 — dB — 40.5 — % — — dBc — — dB — 120 — W — 16 — dB — 51 — Degradation In Output Power MRF9120R3 MRF9120LR3 3 ...

Page 4

... Microstrip Z8, Z9 0.600″ x 0.220″ Microstrip Z10, Z11 0.200″ x 0.630″ Microstrip Z12, Z13 0.500″ x 0.630″ Microstrip Figure 1. 880 MHz Broadband Test Circuit Schematic MRF9120R3 MRF9120LR3 4 For More Information On This Product, C21 C10 L1 C11 R1 ...

Page 5

... Value, P/N or DWG Manufacturer Newark Newark ATC Newark ATC ATC ATC ATC ATC ATC ATC ATC ATC Newark ATC Newark Newark Newark Newark Anaren Coilcraft Garret CMR CMR V C27 DD C25 C26 Balun2 C19 C17 OUTPUT C16 C18 C20 C23 C24 V C28 DD MRF9120R3 MRF9120LR3 5 ...

Page 6

... Order −50 5th Order −60 7th Order − 100 P , OUTPUT POWER (WATTS) PEP out Figure 6. Intermodulation Distortion Products versus Output Power MRF9120R3 MRF9120LR3 6 For More Information On This Product, TYPICAL CHARACTERISTICS G ps η Vdc 120 W (PEP) out 500 mA ...

Page 7

... Output Power Vdc 500 880 MHz IS−97, Pilot, Sync, Paging Traffic Codes 8 through OUTPUT POWER (WATTS) AVG. out versus Output Power Go to: www.freescale.com −20 −40 − −20 −40 −60 −80 100 MRF9120R3 MRF9120LR3 7 ...

Page 8

... Freescale Semiconductor, Inc. Z source Z load Input Matching Network Figure 10. Series Equivalent Input and Output Impedance MRF9120R3 MRF9120LR3 8 For More Information On This Product Ω 895 MHz Z source f = 895 MHz = 2 × 500 mA 120 W PEP DD DQ out source load MHz Ω ...

Page 9

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF9120R3 MRF9120LR3 9 ...

Page 10

... Freescale Semiconductor, Inc. MRF9120R3 MRF9120LR3 10 For More Information On This Product, NOTES Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 11

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF9120R3 MRF9120LR3 11 ...

Page 12

... MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 MRF9120R3 MRF9120LR3 12 For More Information On This Product, PACKAGE DIMENSIONS Q 2X bbb T ...

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