MRF8S7170N FREESCALE [Freescale Semiconductor, Inc], MRF8S7170N Datasheet - Page 8

• Manufacturer Part Number: MRF8S7170N
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

8
MRF8S7170NR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
60
59
58
57
56
55
54
53
52
51
50
49
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
V
31
DD
= 28 Vdc, I
(MHz)
(MHz)
32
728
748
768
728
748
768
Figure 10. Pulsed CW Output Power
f
f
748 MHz
33
versus Input Power @ 28 V
Test Impedances per Compression Level
DQ
= 1200 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
34
P1dB
P1dB
P1dB
P
Watts
in
229
227
214
, INPUT POWER (dBm)
35
728 MHz
P1dB
36
0.61 - j2.32
0.73 - j2.60
0.72 - j2.82
Z
dBm
53.6
53.5
53.3
source
768 MHz
37
Ω
748 MHz
38
Watts
310
303
293
39
0.72 - j1.32
0.81 - j1.27
0.58 - j1.46
P3dB
728 MHz
Z
40
load
Ω
768 MHz
dBm
54.9
54.8
54.6
Actual
Ideal
41
42
Freescale Semiconductor
RF Device Data