MRF8S7170N FREESCALE [Freescale Semiconductor, Inc], MRF8S7170N Datasheet - Page 7

• Manufacturer Part Number: MRF8S7170N
• Description: RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
Figure 9. Series Equivalent Source and Load Impedance
Input
Matching
Network
Z
Z
source
load
MHz
710
720
730
740
750
760
770
780
790
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= 28 Vdc, I
gate to ground.
drain to ground.
Z
source
0.876 - j2.237
0.910 - j2.150
0.942 - j2.080
0.970 - j2.032
0.981 - j2.013
0.961 - j2.009
0.843 - j1.955
0.787 - j1.881
0.911 - j1.996
Z
DQ
source
Device
Under
Test
W
= 1200 mA, P
Z
out
load
= 50 W Avg.
1.685 - j0.887
1.659 - j0.776
1.650 - j0.683
1.660 - j0.610
1.677 - j0.563
1.688 - j0.550
1.687 - j0.551
1.660 - j0.557
1.620 + j0.548
Z
load
W
Output
Matching
Network
MRF8S7170NR3
7