MRF5S21130R3 MOTOROLA [Motorola, Inc], MRF5S21130R3 Datasheet - Page 2

• Manufacturer Part Number: MRF5S21130R3
• Description: The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
• Manufacturer: MOTOROLA [Motorola, Inc]

THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
(1) Part is internally matched both on input and output.
MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3
Thermal Resistance, Junction to Case
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate–Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain–Source On–Voltage
Forward Transconductance
Reverse Transfer Capacitance
Common–Source Amplifier Power Gain
Drain Efficiency
Third Order Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
2
Case Temperature 80°C, 92 W CW
Case Temperature 80°C, 28 W CW
(V
(V
(V
(V
(V
(V
(V
(V
(V
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
(V
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
(V
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 –10 MHz and f2 +10 MHz
referenced to carrier channel power.)
(V
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 –5 MHz and f2 +5 MHz.)
(V
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
DS
DS
GS
DS
DS
GS
DS
DS
DD
DD
DD
DD
DD
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
DS
D
D
D
D
GS
GS
out
out
out
out
out
= 300 µAdc)
= 1200 mAdc)
= 3 Adc)
= 3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 28 W Avg., I
= 28 W Avg., I
= 28 W Avg., I
= 28 W Avg., I
= 28 W Avg., I
Characteristic
Characteristic
DQ
DQ
DQ
DQ
DQ
= 1200 mA, f1 = 2112.5 MHz,
= 1200 mA, f1 = 2112.5 MHz,
= 1200 mA, f1 = 2112.5 MHz,
= 1200 mA, f1 = 2112.5 MHz,
= 1200 mA, f1 = 2112.5 MHz,
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
Symbol
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
GSS
IRL
DSS
DSS
g
η
rss
fs
ps
Symbol
R
Min
2.5
12
24
—
—
—
—
—
—
—
—
—
θJC
MOTOROLA RF DEVICE DATA
0.26
13.5
Typ
–37
–39
–12
2.7
3.7
7.5
2.6
26
—
—
—
Max
0.56
0.56
Max
–35
–37
3.5
0.3
10
–9
—
—
—
—
—
1
1
°C/W
Unit
µAdc
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%
S