MRF5S21090HR3_06 FREESCALE [Freescale Semiconductor, Inc], MRF5S21090HR3_06 Datasheet - Page 5

• Manufacturer Part Number: MRF5S21090HR3_06
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
−20
−25
−30
−35
−40
−45
−50
−55
−60
17
16
15
14
13
12
0.1
Figure 6. Intermodulation Distortion Products
3rd Order
5th Order
7th Order
450 mA
1000 mA
650 mA
850 mA
I
DQ
Figure 4. Two - Tone Power Gain versus
= 1200 mA
1
P
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
, OUTPUT POWER (WATTS) PEP
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
V
Two−Tone Measurement, 10 MHz Tone Spacing
DD
DD
Output Power
= 28 Vdc, P
= 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
1
Figure 3. 2 - Carrier W - CDMA Broadband Performance
15
14
13
12
10
11
9
8
7
6
5
2080
10
out
ACPR
G
IM3
IRL
η
= 90 W (PEP), I
ps
D
2100
V
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
DD
TYPICAL CHARACTERISTICS
DQ
= 28 Vdc, P
10
2120
100
= 850 mA
f, FREQUENCY (MHz)
out
2140
= 19 W (Avg.), I
2160
−15
−20
−25
−30
−35
−40
−45
−50
DQ
57
55
53
51
49
47
45
30
= 850 mA
P1dB = 50.47 dBm (111.4 W)
V
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
Figure 5. 3rd Order Intermodulation Distortion
2180
DD
1
Figure 7. Pulse CW Output Power versus
= 28 Vdc
32
650 mA
P3dB = 51.17 dBm (130.9 W)
2200
P
out
40
35
30
25
20
−20
−25
−30
−35
−40
−45
, OUTPUT POWER (WATTS) PEP
MRF5S21090HR3 MRF5S21090HSR3
versus Output Power
P
in
34
, INPUT POWER (dBm)
I
Input Power
DQ
= 450 mA
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
10
−10
−15
−20
−25
−30
−35
DD
36
= 28 Vdc, I
1200 mA
DQ
38
850 mA
= 850 mA
Ideal
100
40
1000 mA
Actual
42
5