MRF5S21090HR3_06 FREESCALE [Freescale Semiconductor, Inc], MRF5S21090HR3_06 Datasheet - Page 2

• Manufacturer Part Number: MRF5S21090HR3_06
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

2
MRF5S21090HR3 MRF5S21090HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics (DC)
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset.. PAR = 8.5 dB @ 0.01%
Probability on CCDF
Human Body Model
Machine Model
Charge Device Model
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
D
GS
GS
= 200 μAdc)
= 850 mAdc)
= 2 Adc)
= 2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
Test Conditions
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
GSS
= 850 mA, P
IRL
DSS
DSS
g
η
rss
fs
ps
D
out
12.5
Min
2.5
—
—
—
—
—
—
—
24
—
—
—
= 19 W Avg., f1 = 2112.5 MHz,
- 37.5
- 40.5
0.25
14.5
Typ
- 15
2.9
3.9
1.7
26
—
—
—
M3 (Minimum)
C7 (Minimum)
5
1 (Minimum)
Class
Freescale Semiconductor
Max
3.5
- 35
- 38
10
—
—
—
—
—
—
- 9
1
1
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%
S