MRF21125S MOTOROLA [Motorola, Inc], MRF21125S Datasheet - Page 2

• Manufacturer Part Number: MRF21125S
• Description: RF POWER FIELD EFFECT TRANSISTORS
• Manufacturer: MOTOROLA [Motorola, Inc]

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth.
Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
(1) Part is internally matched both on input and output.
MRF21125 MRF21125S MRF21125SR3
Drain–Source Breakdown Voltage
Gate–Source Leakage Current
Zero Gate Voltage Drain Leakage Current
Forward Transconductance
Gate Threshold Voltage
Gate Quiescent Voltage
Drain–Source On–Voltage
Reverse Transfer Capacitance (1)
Common–Source Amplifier Power Gain
Drain Efficiency
Third Order Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
Output Mismatch Stress
2
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
(V
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
(V
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 –15 MHz and f2 +15 MHz referenced to
carrier channel power.)
(V
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 –10 MHz and f2 +10 MHz referenced to
carrier channel power.)
(V
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
(V
VSWR = 5:1, All Phase Angles at Frequency of Test)
DD
DD
DD
DD
DD
GS
GS
DS
DS
DS
DS
GS
DS
DD
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 0 Vdc, I
= 5 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 10 V, I
= 28 V, I
= 10 V, I
= 28 Vdc, V
= 28 Vdc, P
D
D
D
D
= 300 µA)
= 1300 mA)
= 1 A)
DS
D
out
out
out
out
out
= 100 µAdc)
GS
GS
out
= 3 Adc)
= 0 Vdc)
= 20 W Avg, 2–carrier W–CDMA, I
= 20 W Avg, 2–carrier W–CDMA, I
= 20 W Avg, 2–carrier W–CDMA, I
= 20 W Avg, 2–carrier W–CDMA, I
= 20 W Avg, 2–carrier W–CDMA, I
= 0 Vdc)
= 0, f = 1 MHz)
= 125 W CW, I
Characteristic
DQ
(T
= 1600 mA, f = 2170 MHz,
C
= 25°C unless otherwise noted)
DQ
DQ
DQ
DQ
DQ
= 1600 mA,
= 1600 mA,
= 1600 mA,
= 1600 mA,
= 1600 mA,
V
Symbol
V
V
V
ACPR
(BR)DSS
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
GSS
IRL
DSS
g
Ψ
η
rss
fs
ps
Min
2.5
65
12
17
—
—
—
—
—
—
—
—
2
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
Before and After Test
10.8
0.12
Typ
–43
–45
–12
3.9
5.4
13
18
—
—
—
—
Max
–9.0
–40
–40
4.5
10
—
—
—
—
—
—
1
4
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%
S