N0100P-T1-AT RENESAS [Renesas Technology Corp], N0100P-T1-AT Datasheet - Page 7

• Manufacturer Part Number: N0100P-T1-AT
• Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
• Manufacturer: RENESAS [Renesas Technology Corp]

100
10000
-7
-6
-5
-4
-3
-2
-1
90
80
70
60
50
40
30
20
10
1000
0
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-0.1
10
0
I
D
-0.1
Pulsed
= –3.5 A
1
V
f = 1 MHz
GS
V
2
= 0 V
DD
V
= –10 V
3
Q
DS
I
G
D
–6 V
- Drain to Source Voltage - V
4
- Gate Change - nC
-1
- Drain Current - A
-1
5
6
7
V
-10
8
GS
-10
= –1.8 V
–2.5 V
–3.0 V
–4.5 V
9 10 11 12
C
C
C
rss
iss
oss
-100
Data Sheet D20203EJ1V0DS
-100
1000
-0.01
-100
100
-0.1
-10
10
-1
1
-0.1
0.0
V
V
R
Pulsed
DD
GS
G
= 10 Ω
= –6 V
= –4.5 V
SWITCHING CHARACTERISTICS
V
F(S-D)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
- Source to Drain Voltage - V
V
0.5
-1
GS
I
D
= 0 V
- Drain Current - A
-10
1.0
t
t
t
t
d(off)
f
r
d(on)
N0100P
-100
1.5
5