N0100P-T1-AT RENESAS [Renesas Technology Corp], N0100P-T1-AT Datasheet - Page 4

• Manufacturer Part Number: N0100P-T1-AT
• Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
• Manufacturer: RENESAS [Renesas Technology Corp]

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
V
2
Reverse Recovery Time
Reverse Recovery Charge
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
GS
0
TEST CIRCUIT 1 SWITCHING TIME
τ = 1 s
Duty Cycle ≤ 1%
PG.
(−)
μ
τ
CHARACTERISTICS
R
G
D.U.T.
Note
Note
R
V
DD
L
Note
V
V
Wave Form
Wave Form
V
V
Wave Form
Wave Form
GS
GS
DS
DS
SYMBOL
V
V
V
V
R
R
R
R
A
V
V
V
V
GS (−)
GS (−)
DS (−)
DS (−)
| y
t
t
I
I
DS(on)1
DS(on)2
DS(on)3
DS(on)4
C
C
Q
Q
0
0
DS
DS
0
0
C
GS(off)
Q
d(on)
d(off)
F(S-D)
Q
DSS
GSS
T
= 25°C)
t
t
10%
10%
oss
rss
GS
GD
fs
iss
t
t
r
f
rr
G
rr
d(on)
d(on)
90%
90%
|
Data Sheet D20203EJ1V0DS
t
t
on
on
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
di/dt = 50 A/
10% 10%
10% 10%
t
t
D
F
F
r
r
DS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 3.5 A, V
= 3.5 A, V
=
= 10 Ω
V
V
=
=
=
=
=
=
=
=
=
= 0 V,
=
=
=
=
−
t
t
GS
GS
d(off)
d(off)
3.5 A
−
−
−
−
m
−
−
−
−
−
−
−
−
12 V, V
8 V, V
10 V, I
10 V, I
4.5 V, I
3.0 V, I
2.5 V, I
1.8 V, I
10 V,
6 V, I
4.5 V,
10 V,
4.5 V,
TEST CONDITIONS
t
t
off
off
90%
90%
GS
GS
μ
D
90%
90%
t
t
s
DS
f
f
D
D
=
D
D
D
D
= 0 V
GS
= 0 V,
=
=
= 0 V
=
=
=
=
−
= 0 V
−
−
1.75 A,
−
−
−
−
1.0 mA
2.0 A
2.0 A
2.0 A
2.0 A
1.5 A
TEST CIRCUIT 2 GATE CHARGE
PG.
−
MIN.
I
0.45
G
4
= −2 mA
50 Ω
D.U.T.
TYP.
0.84
720
150
240
114
270
300
8.3
1.3
2.1
37
42
46
60
80
18
37
MAX.
−
−
m
105
44
56
62
1.5
10
10
N0100P
R
V
DD
L
UNIT
mΩ
mΩ
mΩ
mΩ
μ
μ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A