ina-32063 ETC-unknow, ina-32063 Datasheet - Page 5

• Manufacturer Part Number: ina-32063
• Description: 3.0 Ghz Wideband Silicon Rfic Amplifier
• Manufacturer: ETC-unknow

INA-32063 Applications
Information
Introduction
The INA-32063 is a +3 volt silicon
RFIC amplifier that is designed
with a two stage internal network
to provide a broadband gain and
50
With a typical +4.8 dBm P
compressed output power at
1900 MHz, for only 20 mA supply
current. The broad bandwidth,
INA-32063, is well suited for
amplifier applications in mobile
communication systems.
A feature of the INA-32063 is a
positive gain slope over the
1– 2.5 GHz range that is useful in
many satellite-based TV and
datacom systems.
In addition to use in buffer and
driver amplifier applications in
the cellular market, the
INA-32063 will find many
applications in battery operated
wireless communication systems.
Operating Details
The INA-32063 is a voltage-biased
device that operates from a
+3 volt power supply with a
typical current drain of 20 mA. All
bias regulation circuitry is
integrated into the RFIC.
Figure 10 shows a typical imple-
mentation of the INA-32063. The
supply voltage for the INA-32063
must be applied to two terminals,
the V
Figure 10. Basic Amplifier
Application.
Input
RF
C
block
d
input and output impedance.
Gnd2
Gnd1
pin and the RF Output pin.
Gnd1
-1 dB
RFC
C
C
out
bypass
Output
RF
V
d
The V
fier is RF bypassed by placing a
capacitor to ground near the V
pin of the amplifier package.
The power supply connection to
the RF Output pin is achieved by
means of a RF choke (inductor).
The value of the RF choke must
be large relative to 50
to prevent loading of the RF
Output. The supply voltage end of
the RF choke is bypassed to
ground with a capacitor. If the
physical layout permits, this can
be the same bypass capacitor that
is used at the V
amplifier.
Blocking capacitors are normally
placed in series with the RF Input
and the RF Output to isolate the
DC voltages on these pins from
circuits adjacent to the amplifier.
The values for the blocking and
bypass capacitors are selected to
provide a reactance at the lowest
frequency of operation that is
small relative to 50 .
Example Layout for 50
Output Amplifier
An example layout for an ampli-
fier using the INA-32063 with
50
shown in Figure 11.
Figure 11. RF Layout.
This example uses a
microstripline design (solid
groundplane on the backside of
the circuit board). The circuit
board material is 0.031-inch thick
FR-4. Plated through holes (vias)
RF Input
input and 50
d
connection to the ampli-
50
Gnd 1
Gnd 1
d
terminal of the
50
output is
RF Output
and V d
Gnd 2
in order
d
are used to bring the ground to
the topside of the circuit where
needed. The performance of
INA-32063 is sensitive to ground
path inductance. The two-stage
design creates the possibility of a
feedback loop being formed
through the ground returns of the
stages, Gnd 1 and Gnd 2.
Figure 12. INA-32063 Potential
Ground Loop.
Figure 13. INA-32063 Suggested
Layout.
At least one ground via should be
placed adjacent to each ground
pin to assure good RF grounding.
Multiple vias are used to reduce
the inductance of the path to
ground and should be placed as
close to the package terminals as
practical.
The effects of the potential
ground loop shown in Figure 12
may be observed as a “peaking” in
the gain versus frequency
response, an increase in input
VSWR, or even as return gain at
the input of the INA-32063.
Figure 14 shows an assembled
amplifier. The +3 volt supply is
fed directly into the V
5
VIA
Gnd 1
Gnd 1
VIA
d
pin of the
Gnd 2
Gnd 2
VIA