ina-32063 ETC-unknow, ina-32063 Datasheet - Page 2

• Manufacturer Part Number: ina-32063
• Description: 3.0 Ghz Wideband Silicon Rfic Amplifier
• Manufacturer: ETC-unknow

Absolute Maximum Ratings
INA-32063 Electrical Specifications
Notes:
3. Guaranteed specifications are 100% tested in production.
4. Standard deviation number is based on measurement of a large number of parts from three non-consecutive wafer lots
VSWR
Symbol
Symbol
VSWR
during the initial characterization of this product, and is intended to be used as an estimate for distribution of the
typical specification.
|S
T
NF
P
P
IP
V
T
STG
1dB
21
in
d
d
j
50
3
|
2
out
in
Device Voltage,
RF output to ground
CW RF Input Power
Junction Temperature
Storage Temperature
Gain in 50
Noise Figure
Output Power at 1 dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Parameters and Test Conditions
Parameter
system
Units
dBm
, T
V
C
C
C
= 25 C, Z
f = 0.1 – 2.4 GHz
f = 0.1 – 2.4 GHz
Maximum
Absolute
-65 to 150
+7.0
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.9 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
150
O
6.0
= 50
[1]
,V
d
Units Min.
= 3 V
dBm
dBm
Notes:
1. Operation of this device above any one
2. T
mA
dB
dB
of these limits may cause permanent
damage.
temperature at the package pins where
contact is made to the circuit board)
C
= 25 C (T
2
Thermal Resistance
15.5
[3]
jc
C
= 170 C/W
is defined to be the
Typ. Max. Std.
1.1:1
1.6:1
16.8
17.8
18.2
15.3
14.4
11.5
4.4
3.6
4.8
4.0
20
25
[3]
[2]
Dev.
0.39
0.21
:
1.1
[4]